Distributed electron cyclotron resonance in silicon processing: Epitaxy and etching

Dielectric and infrared properties of TiO2films containing anatase and rutile

“…The microwaves were introduce into the reactor via an antenna system described elsewhere [3]. The advantage of this method is that the plasma potential is rather low so that bombardment of the substrate with energetic species in the plasma commonly found in parallel plate type reactors can be avoided.…”

“…Given the large number of criteria, it is perhaps not surprising that no immediate solution to the problem has presented itself. 3 Also at the LEMD-CNRS, BP 166X, Avenue des Martyrs, 38042 Grenoble Cedex, France.…”

Role of oxygen impurities in etching of silicon by atomic hydrogen

“…Etching and posttreatment of silicon with hydrogen glow discharge plasma [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16] or with atomic hydrogen produced by hot filament 4,17,18 have again received significant attention recently in the context of new, alternative gases and processes for patterning in microelectronic device fabrication, [1][2][3] posttreatment of thin-film silicon in order to enhance its crystallization, [11][12][13][14] cleaning and passivation of wafers prior to the deposition of epitaxial films, [19][20][21][22][23][24][25][26][27][28][29][30][31][32][33][34][35][36][37] and cleaning of devices for controlled nuclear research 38,39 and of equipment for plasma-induced deposition of thin films.…”

Study of oxygen and carbon species on Si substrate during in-situ cleaning prior to high-quality epitaxial deposition

“…Burke et al found that in his ECR hydrogen cleaning experiments, the atomic hydrogen produced in the plasma was the dominant agent during the cleaning process in reducing the native oxide and the carbonated compounds [30]. In our system, it was assumed that SiO 2 +nH (g) (n=1, 2, …) occurred ; their free energy changes are listed in Table 6.…”