Distortion in short channel FET circuits

Webster, D.R.; Haigh, D.G.; Passiopoulos, G.; Parker, Anthony E.

doi:10.1049/pbcs008e_ch24

Cited by 15 publications

(2 citation statements)

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“…A third-order representation of small-signal incremental drain current, ids(vg5, vds), can be expressed by a two-dimensional Taylor's series as ids = gmVgs + Gdsvds where the coefficients g,, g& and g g respectively are transconductance and its derivatives with respect to Vg,; the coefficients Gds, Cis and G2s respectively are the drain-source conductance and its derivatives with respect to Vds; and the coefficients Second order intermodulation (IM2) products are produced by the second-order terms in (1). Cancellation of IM2 occurs when the transconductance and output conductance terms sum to zero [2]. That is, when 0-7803-3374-8/!27/$10.00 0 1997 IEEE.…”

Section: B Intermodulation Cancellationmentioning

confidence: 99%

Analysis of intermodulation nulling in HEMTs

Parker²

1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings

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This paper examines intermodulation nulling generated by the nonlinear current voltage characteristics of HEMTs. The conditions for iintermodulation cancellation in terms of the coefficients of a two-dimensional Taylor's series expansion are established and verified with measurement and simulation. Second and third-order intermodulation cancellation can be assessed by simple examination of the transconductance characteristics of the device. This permits routine selection of optional bias after characterising the devices.

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Section: B Intermodulation Cancellationmentioning

confidence: 99%

Analysis of intermodulation nulling in HEMTs

Parker²

1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings

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“…The reported experimental extractions have permitted to evaluate the Ids equations for IMD purposes since then, and have led to important conclusions on bias and load control for low nonlinear distortion. The reactive nonlinearities have been considered of secondary or minor effect; however, not disposing of a procedure for extracting their power-series terms has determined the nowadays incapacity for evaluating the extent of its minor role as it has been recently considered in [5].…”

Section: Introductionmentioning

confidence: 99%

Characterizing the gate to source nonlinear capacitor role on FET IMD performance

García

Mediavilla²,

Pedro³

et al.

1998 IEEE MTT-S International Microwave Symposium Digest (Cat. No.98CH36192)

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This paper discusses the gate to source nonlinear capacitor contribution on small signal intermodulation distortion (IMD) performance of FET devices. The second and third order coefficients for the Cgs(Vgs) Taylor-series expansion, experimentally extracted with a simplified one-sided version of our previously proposed test set-up, are shown to be responsible for some detected differences on IMD behavior at high frequencies.

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Modeling MESFETs and HEMTs intermodulation distortion behavior using a generalized radial basis function network

García

Puente²,

Mediavilla³

et al. 1999

Int J RF and Microwave Comp Aid Eng

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This paper proposes a generalized radial basis function (GRBF) network to accurately describe drain to source current nonlinearity for intermodulation distortion (IMD) prediction of MESFETs and HEMTs applications in their saturated region. Trying to analytically reproduce the nonlinearities second and third order Taylor‐series coefficients, responsible for IMD performance in these devices, may result in a quite difficult task. Neural networks were introduced as a robust alternative for microwave modeling, mostly employing the black‐box model type approach of the multilayer perceptron network. The GRBF network we consider is a generalization of the RBF network, which takes advantage of problem dependent information. Allowing different variances for each dimension of input space, the GRBF network makes use of soft nonlinear dependence of the drain to source current derivatives with drain to source voltage for improving accuracy at reduced cost. The network structure and its learning algorithm are presented. Results of its performance are compared to other structures with similar amounts of parameters. Carrier to intermodulation (C/I) predictions validate this approach for precise IMD control versus bias and load in class A amplifiers applications. ©1999 John Wiley & Sons, Inc. Int J RF and Microwave CAE 9: 261–276, 1999.

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Distortion in short channel FET circuits

Cited by 15 publications

References 0 publications

Analysis of intermodulation nulling in HEMTs

Analysis of intermodulation nulling in HEMTs

Characterizing the gate to source nonlinear capacitor role on FET IMD performance

Modeling MESFETs and HEMTs intermodulation distortion behavior using a generalized radial basis function network

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