Distinctive features of the creation of radiation-induced defects in p-Si by photonassisted low-dose ion implantation

Barabanenkov, M. Yu.; Leonov, A. V.; Mordkovich, V.N.; Omel'yanovskaya, N.M.

doi:10.1134/1.1187789

Cited by 2 publications

(1 citation statement)

References 3 publications

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“…Ion implantation is an important tool to create defects in solids (23)(24)(25). Oxygen-related point defects, defect complexes and vacancy creation are observed in different materials and its role in the modification on the physical properties is well emphasized (25).…”

Section: Radiation Effects and Defects In Solidsmentioning

confidence: 99%

Room temperature ferromagnetism in 200 KeV Nickel ion implanted Zinc oxide film

Ghosh

Kanjilal

Pandey

et al. 2008

Radiation Effects and Defects in Solids

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Room temperature ferromagnetism is observed in 200 keV Ni (∼3%) implanted ZnO films deposited on Si (100) substrate by vapour phase transport process. Crystalline phases of ZnO and ZnO:Ni films are determined by grazing angle X-ray diffraction (GAXRD) technique. Using X-ray Fluroscence (XRF) technique the presence of Ni in ZnO matrix is detected. Magnetic measurement by alternating gradient magnetometer (AGM) shows a clear hysterisis loop at room temperature with a saturation magnetization of 0.025 emu/cm 3 , remnant magnetization of 0.0030 emu/cm 3 and coercive field of 53.14 Oe. Surface morphological study by atomic force microscope (AFM) of the films shows ∼73% enhancement of grain size and increase in surface areal density of grains. This is associated with almost 10 times reduction in resistivity value of the Ni implanted ZnO films as compared to its unimplanted counterpart as revealed by four probe resistivity technique. The result is understood on the basis of an exchange interaction of the charge carriers generated due to thermal effects of ion implantation and the localized spins of Ni.

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Section: Radiation Effects and Defects In Solidsmentioning

confidence: 99%

Room temperature ferromagnetism in 200 KeV Nickel ion implanted Zinc oxide film

Ghosh

Kanjilal

Pandey

et al. 2008

Radiation Effects and Defects in Solids

View full text Add to dashboard Cite

show abstract

Study of Recombination and Electric Properties of p-Si Crystals Irradiated with Electrons

et al. 2012

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Specimens of p-Si irradiated with 8-MeV electrons have been studied. Various radiation-induced defects have been identified by analyzing the temperature dependences of the hole concentration and the curves of isochronous annealing of irradiated specimens. By analyzing the dependences of the lifetime of minority charge carriers τ, the specific resistance ρ, the hole concentration p, and the Hall mobility μH on the isochronous annealing temperature Tann, theannealing-induced features in the behavior of p and μH are revealed. We determined which radiation-induced defects are recombination centers. From the curves of isochronous annealing carried out during various time intervals, the activation energies of annealing, Eann, are determined for a number of radiation-induced defects.

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Distinctive features of the creation of radiation-induced defects in p-Si by photonassisted low-dose ion implantation

Cited by 2 publications

References 3 publications

Room temperature ferromagnetism in 200 KeV Nickel ion implanted Zinc oxide film

Room temperature ferromagnetism in 200 KeV Nickel ion implanted Zinc oxide film

Study of Recombination and Electric Properties of p-Si Crystals Irradiated with Electrons

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