Dissolution Rate Monitor Tool to Measure EUV Photoresist Dissolution

Vesters, Yannick; Simone, Danilo De; Gendt, Stefan De

doi:10.2494/photopolymer.30.675

Cited by 7 publications

(3 citation statements)

References 16 publications

(18 reference statements)

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“…12 The model was implemented in C++ and runs fast enough that it does not add significantly to the overall run time of the MPPM model. In modeling the develop, the maximum and minimum develop rates were chosen in accordance with experimental results, 13 and we chose a threshold in the Mack model such that the develop rate at a deprotection fraction of 0.27 was 35 nm∕30 s. Develop parameters are shown in Table 2, and the corresponding dissolution rate curve is given in Fig. 3.…”

Section: Dissolution Modelmentioning

confidence: 99%

Three-dimensional modeling of EUV photoresist using the multivariate Poisson propagation model

Long

Neureuther

Naulleau

2021

J. Micro/Nanopattern. Mats. Metro.

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Background: As target feature sizes for EUV lithography shrink, it is becoming ever more important to understand the intricate details of photoresist materials, including the role of the "third dimension"-the dimension perpendicular to the wafer. With resist thicknesses shrinking toward the single-digit nanometer scale alongside target linewidths, small changes in resist performance in this dimension will have a greater overall effect on pattern quality.Aim: To use modeling to understand the effect that the third dimension has on resist performance, in particular the interplay between the third dimension and resist stochastics.Approach: We developed a three-dimensional version of the multivariate Poisson propagation model, a stochastic resist simulator. As a test case for the model, we explore the role of acid diffusion in the so-called third dimension by simulating 10 5 vias at a series of z-blur conditions.Results: Our model suggests that increased z-blur yields an improvement in both dose to size and pattern uniformity without sacrificing resolution. Conclusions:We have developed a 3D resist model that can simulate large numbers of contacts. Early results from the 3D model show improved patterning performance can be achieved by increasing the z-blur.

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Section: Dissolution Modelmentioning

confidence: 99%

Three-dimensional modeling of EUV photoresist using the multivariate Poisson propagation model

Long

Neureuther

Naulleau

2021

J. Micro/Nanopattern. Mats. Metro.

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“…Photoresist is coated onto a 300-mm Si wafer above a 1000 nm thermally grown SiO 2 layer followed by a flood exposure with EUV light using an ASML NXE3300 scanner. After exposure, the wafer is brought to the DRM tool for dissolution rate measurement; photoresist is put in contact with the developer, while thickness is measured dynamically by reflectometry [2].…”

Section: Dissolution Rate Monitor Measurements (Drm)mentioning

confidence: 99%

Metal Based Materials for EUV Lithography

Kosma¹,

Simone²,

Vandenberghe³

2019

J. Photopol. Sci. Technol.

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Considering the scenario that polymer-based resists will possibly be struggling to satisfy all performance criteria for high volume manufacturing imposed by high power sources and high-NA imaging, it seemed necessary to introduce new materials for EUV lithography. To that end, nanometer scale metal clusters, originally designed to be building units of a metalorganic framework, were introduced and tested as metal-based resists. In the work herein, we wish to report all the progress that has been achieved in the patterning performance, focusing mainly on 32 nm and 44 nm pitch 1:1 lines and space pattern.

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“…Resist was exposed to flood EUV light on ASML NXE3300 scanner. After exposure and PEB, the wafer is brought to the DRM tool for dissolution rate measurement: Photoresist is put in contact with the developer solution (TMAH 0.26 N), while thickness is measured dynamically by reflectometry, as further described in Ref 19…”

mentioning

confidence: 99%

Sensitizers in extreme ultraviolet chemically amplified resists: mechanism of sensitivity improvement

Vesters

Jiang

Yamamoto

et al. 2018

J. Micro/Nanolith. MEMS MOEMS

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Extreme ultraviolet (EUV) lithography utilizes photons with 92 eV energy to ionize resists, generate secondary electrons, and enable electron driven reactions that produce acid in chemically amplified photoresists. Efficiently using the available photons is of key importance. To increase photon absorption, sensitizer molecules, containing highly absorbing elements, can be added to photoresist formulations. These sensitizers have gained growing attention in recent years, showing significant sensitivity improvement. Aside from an increasing absorption, adding metal salts into the resist formulation can induce other mechanisms, like higher secondary electron generation or acid yield, or modification of the dissolution rate that also can affect patterning performance. In this work, we used different sensitizers in chemically amplified resists. We measured experimentally the absorption of EUV light, the acid yield, the photoelectron emission, the dissolution rate, and the patterning performance of the resists. Addition of a sensitizer raised the acid yield even though a decrease in film absorbance occurred, suggesting an apparent increase in chemically resonant secondary electrons. While patterning results confirm a significant sensitivity improvement, it was at the cost of roughness degradation at higher sensitizer loading. This is hypothesized by the chemical distribution of the sensitizer in the resist combined with a modification of the dissolution contrast, as observed by dissolution rate monitor measurements.

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Dissolution Rate Monitor Tool to Measure EUV Photoresist Dissolution

Cited by 7 publications

References 16 publications

Three-dimensional modeling of EUV photoresist using the multivariate Poisson propagation model

Three-dimensional modeling of EUV photoresist using the multivariate Poisson propagation model

Metal Based Materials for EUV Lithography

Sensitizers in extreme ultraviolet chemically amplified resists: mechanism of sensitivity improvement

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