“…Interaction of SiH 2 Cl 2 with Si surfaces is not only of importance for atomic-scale control of Si epitaxial growth, but also of interest as a basic adsorption system. The adsorption of SiH 2 Cl 2 on Si͑111͒ and Si͑100͒ surfaces have been studied by a variety of experimental and theoretical methods such as time-of-flight scattering and recoiling spectroscopy, 1 desorption spectroscopy, 2,3 x-ray photoemission spectroscopy ͑XPS͒, 4,5 Auger electron spectroscopy, 5 scanning tunneling microscopy ͑STM͒, 5,6 and ab initio molecular orbital calculation. 7 These studies showed that SiH 2 Cl 2 chemisorbs on the Si͑111͒-͑7ϫ7͒ and Si͑100͒-͑2ϫ1͒ surfaces even at room temperature.…”