2018
DOI: 10.1016/j.jnoncrysol.2018.01.046
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Dissociation characteristics of proton release in a-SiO2 by first-principles theory

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Cited by 15 publications
(10 citation statements)
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“…There is a clear ELDRS effect 25 , with an enhancement factor of about 2.3. Under gamma ray radiations, protons are generated in the silica layer through dissociation reactions between oxide trapping charges and hydrogen molecule 26,27 , see Fig. 1 (b).…”
Section: Resultsmentioning
confidence: 99%
See 2 more Smart Citations
“…There is a clear ELDRS effect 25 , with an enhancement factor of about 2.3. Under gamma ray radiations, protons are generated in the silica layer through dissociation reactions between oxide trapping charges and hydrogen molecule 26,27 , see Fig. 1 (b).…”
Section: Resultsmentioning
confidence: 99%
“…There is a clear ELDRS effect, with an enhancement factor of about 2.3. Under gamma-ray radiations, protons are generated in the silica layer through dissociation reactions between oxide trapping charges and hydrogen molecules , (see Figure b). The generated protons diffuse to the oxide/silicon interface and further generate interface traps ( ) through depassivation reactions on passivated defects Si–H bonds on the interface. , The interface traps result in an increase in the surface recombination velocity ( ) above the base region, which leads to the base current increment , Here the superscript I stands for ID and , where is the carrier thermal velocity and σ is the carrier capture cross section.…”
Section: Resultsmentioning
confidence: 99%
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“…[33][34][35] Meanwhile, P b centers are converted from E 0 γ centers through an H 2 -mediated two-step process. First, the generated E 0 γ centers interact with pre-existing H 2 and release protons (H þ ) by breaking the H─H bonds [24,[36][37][38][39][40][41]…”
Section: Defect Dynamics Under a Constant Dose Ratementioning
confidence: 99%
“…At the same time, the positively charged defects will react with the molecular hydrogen (H 2 ) to generate protons. As the holes are trapped by hydrogenated defects near the interface, protons are likely released . The released protons will migrate toward the a‐SiO 2 /Si interface and react with the passivated dangling bonds, after which the saturated defects are reactivated.…”
Section: Introductionmentioning
confidence: 99%