Displacement field measurement of metal sub-lattice in inversion domains of indium-doped zinc oxide

Yu, Wentao; Mader, W.

doi:10.1016/j.ultramic.2009.11.023

Cited by 12 publications

(12 citation statements)

References 23 publications

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“…A line profile extracted along the white dashed box is shown as an inset in Figure 6 c. The dilatation strain at the apices of the zig-zag (in red) is up to 10% larger than at the center of the domains (in green). This value is more than twofold higher than the 4.5% value reported for the k = 30 term [ 25 ]. In Figure 7 c a similar strain pattern with maxima and minima is observed for the k = 3 term.…”

Section: Resultscontrasting

confidence: 54%

Evaluation of the Nanodomain Structure in In-Zn-O Transparent Conductors

et al. 2021

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The optimization of novel transparent conductive oxides (TCOs) implies a better understanding of the role that the dopant plays on the optoelectronic properties of these materials. In this work, we perform a systematic study of the homologous series ZnkIn2Ok+3 (IZO) by characterizing the specific location of indium in the structure that leads to a nanodomain framework to release structural strain. Through a systematic study of different terms of the series, we have been able to observe the influence of the k value in the nano-structural features of this homologous series. The stabilization and visualization of the structural modulation as a function of k is discussed, even in the lowest term of the series (k = 3). The strain fields and atomic displacements in the wurtzite structure as a consequence of the introduction of In3+ are evaluated.

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Section: Resultscontrasting

confidence: 54%

Evaluation of the Nanodomain Structure in In-Zn-O Transparent Conductors

et al. 2021

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“…The former originally exploits atomically resolved TEM micrographs with respect to lattice fringe distances (Bierwolf et al, 1993; Bayle et al, 1994; Jouneau et al, 1994; Robertson et al, 1995; Rosenauer et al, 1998). As the observed high-resolution pattern is formed by the interference of all diffracted beams passing the objective aperture, subsequent studies included partly extensive analysis of the phases of Bragg beams as a function of specimen thickness, orientation, composition, crystal potential Fourier components, lens aberrations, and defocus (Tillmann et al, 2000; Hÿtch & Plamann, 2001; Rosenauer et al, 2001; Rosenauer et al, 2006; Guerrero et al, 2007; Müller et al, 2010; Yu & Mader, 2010). One disadvantage common to all high-resolution TEM techniques is the restricted field of view not only because the lattice fringe pattern must be sampled densely enough to measure fringe spacings precisely, but also because measured fringe distances need to be normalized to (substrate) regions with known strain state, which may be too far away from the region of interest.…”

Section: Introductionmentioning

confidence: 99%

Strain Measurement in Semiconductor Heterostructures by Scanning Transmission Electron Microscopy

et al. 2012

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This article deals with the measurement of strain in semiconductor heterostructures from convergent beam electron diffraction patterns. In particular, three different algorithms in the field of~circular! pattern recognition are presented that are able to detect diffracted disc positions accurately, from which the strain in growth direction is calculated. Although the three approaches are very different as one is based on edge detection, one on rotational averages, and one on cross correlation with masks, it is found that identical strain profiles result for an In x Ga 1Ϫx N y As 1Ϫy /GaAs heterostructure consisting of five compressively and tensile strained layers. We achieve a precision of strain measurements of 7-9{10 Ϫ4 and a spatial resolution of 0.5-0.7 nm over the whole width of the layer stack which was 350 nm. Being already very applicable to strain measurements in contemporary nanostructures, we additionally suggest future hardware and software designs optimized for fast and direct acquisition of strain distributions, motivated by the present studies.

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“…7,8 Given the constraints on the observed structure, there must be a second IDB in the ZnO to restore the orientation of the tetrahedra between two basal inclusions. [7][8][9] Additionally, because the charge balance of the crystal is disturbed by the MO 2 -composition of the basal layer, there must be extra M 3+ ion substitutions to balance the overall charge. Further complexity is presented by the balance between the two alloying metals in indium iron zinc oxide (IFZO).…”

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confidence: 99%

“…The indium layer is placed on the {10 1 1} plane, where it would be sharply visible along [1120], contrary to experimental reports. [7][8][9][10][11][12] Recent calculations using density functional theory (DFT) concluded that the model of Yan et al has a similar formation energy to that of Li et al …”

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confidence: 99%

Zigzag Inversion Domain Boundaries in Indium Zinc Oxide-Based Nanowires: Structure and Formation

Goldstein¹,

Andrews²,

Berger

et al. 2013

ACS Nano

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Existing models for the crystal structure of indium zinc oxide (IZO) and indium iron zinc oxide (IFZO) conflict with electron microscopy data. We propose a model based on imaging and spectroscopy of IZO and IFZO nanowires and verify it using density functional theory. The model features a {121l } "zigzag" layer, which is an inversion domain boundary containing 5-coordinate indium and/or iron atoms. Higher l values are observed for greater proportion of iron. We suggest a mechanism of formation in which the basal inclusion and the zigzag diffuse inward together from the surface of the nanowire.

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Displacement field measurement of metal sub-lattice in inversion domains of indium-doped zinc oxide

Cited by 12 publications

References 23 publications

Evaluation of the Nanodomain Structure in In-Zn-O Transparent Conductors

Evaluation of the Nanodomain Structure in In-Zn-O Transparent Conductors

Strain Measurement in Semiconductor Heterostructures by Scanning Transmission Electron Microscopy

Zigzag Inversion Domain Boundaries in Indium Zinc Oxide-Based Nanowires: Structure and Formation

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