Semiconductor nanowires (NWs) have been studied extensively for over two decades for their novel electronic, photonic, thermal, electrochemical and mechanical properties. This comprehensive review article summarizes major advances in the synthesis, characterization, and application of these materials in the past decade. Developments in the understanding of the fundamental principles of "bottom-up" growth mechanisms are presented, with an emphasis on rational control of the morphology, stoichiometry, and crystal structure of the materials. This is followed by a discussion of the application of nanowires in i) electronic, ii) sensor, iii) photonic, iv) thermoelectric, v) photovoltaic, vi) photoelectrochemical, vii) battery, viii) mechanical, and ix) biological applications. Throughout the discussion, a detailed explanation of the unique properties associated with the one-dimensional nanowire geometry will be presented, and the benefits of these properties for the various applications will be highlighted. The review concludes with a brief perspective on future research directions, and remaining barriers which must be overcome for the successful commercial application of these technologies.

Although it has been qualitatively demonstrated that surface roughness can reduce the thermal conductivity of crystalline Si nanowires (SiNWs), the underlying reasons remain unknown and warrant quantitative studies and analysis. In this work, vapor-liquid-solid (VLS) grown SiNWs were controllably roughened and then thoroughly characterized with transmission electron microscopy to obtain detailed surface profiles. Once the roughness information (root-mean-square, σ, correlation length, L, and power spectra) was extracted from the surface profile of a specific SiNW, the thermal conductivity of the same SiNW was measured. The thermal conductivity correlated well with the power spectra of surface roughness, which varies as a power law in the 1-100 nm length scale range. These results suggest a new realm of phonon scattering from rough interfaces, which restricts phonon transport below the Casimir limit. Insights gained from this study can help develop a more concrete theoretical understanding of phonon-surface roughness interactions as well as aid the design of next generation thermoelectric devices.