Dispersion and tunneling analysis of the interfacial gate resistance in Schottky barriers

Rohdin, Hans; Moll, N.; Bratkovsky, A. M.; Su, Ching‐Yuan

doi:10.1103/physrevb.59.13102

Cited by 27 publications

(23 citation statements)

References 33 publications

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“…The contributions of top and bottom electrodes may depend on device geometry [17]. It is also possible that an interfacial layer at the metal/dielectric interface that cannot be neglected at microwave frequencies contributes to the device quality factor [19]. Work is underway to reduce the contribution from the bottom electrode to the device Q-factor by using thicker electrodes with a higher conductivity [18,20] and by optimizing the device design.…”

mentioning

confidence: 99%

Microwave dielectric properties of tunable capacitors employing bismuth zinc niobate thin films

Park

Stemmer

et al. 2005

Journal of Applied Physics

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Parallel plate capacitors employing Bi1.5Zn1.0Nb1.5O7 (BZN) thin films with the pyrochlore structure were fabricated on platinized sapphire substrates. The total device quality factor and capacitance were analyzed in the microwave frequency range (up to 20 GHz) by measuring reflection coefficients with a vector network analyzer. The parasitics due to the probe pads were extracted from the measurements. The total device quality factor, which included losses from the dielectric and the electrodes, was more than 200 up to 20 GHz for devices with an area of 100μm2. Based on the frequency dependence of the impedance, series losses of unknown origin appear to dominate the device quality factor at higher frequencies. No significant dispersion in the device capacitance, as would be associated with a dielectric relaxation of BZN, was measured. The large electric field tunability of the permittivity of BZN films and the high device quality factors make these films attractive for voltage controlled microwave devices.

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confidence: 99%

Microwave dielectric properties of tunable capacitors employing bismuth zinc niobate thin films

Park

Stemmer

et al. 2005

Journal of Applied Physics

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“…The capacitance, C, is equivalent capacitance for the capacitances of AlGaN barrier (C AlGaN ) [5], band bending in GaN (C GaN ) [13], interface traps (C S ) [14], spacer layer [15] and two dimensional electron gas For the energy levels corresponding to the two dimensional electron gas, we assumed the presence of five sub-bands within the interface single-well.…”

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confidence: 99%

Effect of Temperature on the Electronic Current of AlGaN/GaN High Electron Mobility Transistors (HEMT)

Yahyazadeh¹,

Hashempour²

2011

JMSE-A

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An analytical-numerical model for the electronic current of two dimensional quantum well AlGaN/GaN in high electron mobility transistors has been developed in this paper that is capable of accurately predicting the effect of temperature on the electronic current of two dimensional quantum well. Salient futures of the model are incorporated of fully and partially occupied sub-bunds in the interface quantum well. In addition temperature dependent of band gap, quantum well electron density, threshold voltage, mobility of electron, dielectric constant, polarization induce charge density in the device are also taken into account. The calculated model results are in very good agreement with existing experimental data for high electron mobility transistors device.

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“…We show how we measure R g , and that it has a component which scales inversely with gate width; and discuss several significant consequences of the interfacial gate resistance for optimization and modeling. We leave the detailed analysis of the physical origin of r gi to a separate article [14].…”

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confidence: 99%

Interfacial gate resistance in Schottky-barrier-gate field-effect transistors

Rohdin

Moll

et al. 1998

IEEE Trans. Electron Devices

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gate resistance, MODFET, MESFET, skin effectWe discuss in depth a previously overlooked component in the gate resistance Rg of SchottkyBarrier-Gate FETs, in particular 0.1-µm gate-length AlInAs/GaInAs MODFETs. The high-frequency noise and power gain of these FETs depends critically on Rg. This has been the motivation for the development of T-gates which keep the gate finger metallization resistance Rga (proportional to the gate width Wg) low, even for very short gate length Lg. Rga increases with frequency due to the skin effect, but our 3D numerical modeling shows conclusively that this effect is negligible. We show that the always "larger-thanexpected" Rg, is instead caused by a component Rgi which scales inversely with Wg. We interpret Rgi as a metal-semiconductor interfacial gate resistance. The dominance of Rgi profoundly affects device optimization and model scaling. For GaAs and InP based SBGFETs there appears to exist a smallest practically achievable normalized interfacial gate resistance rgi on the order of 10 -7 Ωcm 2 . AbstractWe discuss in depth a previously overlooked component in the gate resistance R g of Schottky-Barrier-Gate FETs, in particular 0.1-µm gate-length AlInAs/GaInAs MODFETs.The high-frequency noise and power gain of these FETs depends critically on R g . This has been the motivation for the development of T-gates which keep the gate finger metallization resistance R ga (proportional to the gate width W g ) low, even for very short gate length L g . R ga increases with frequency due to the skin effect, but our 3D numerical modeling shows conclusively that this effect is negligible. We show that the always "larger-thanexpected" R g , is instead caused by a component R gi which scales inversely with W g . We interpret R gi as a metal-semiconductor interfacial gate resistance. The dominance of R gi profoundly affects device optimization and model scaling. For GaAs and InP based SBGFETs there appears to exist a smallest practically achievable normalized interfacial gate resistance r gi on the order of 10 -7 Ωcm2 .

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Dispersion and tunneling analysis of the interfacial gate resistance in Schottky barriers

Cited by 27 publications

References 33 publications

Microwave dielectric properties of tunable capacitors employing bismuth zinc niobate thin films

Microwave dielectric properties of tunable capacitors employing bismuth zinc niobate thin films

Effect of Temperature on the Electronic Current of AlGaN/GaN High Electron Mobility Transistors (HEMT)

Interfacial gate resistance in Schottky-barrier-gate field-effect transistors

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