Rksurne. -Les processus de dommages crees par un ion energetique qui pengtre dans un solide cristallin sont traites d'une f a~o n qualitative. Les differentes methodes d'etudier les mkcanismes de dommage et les defauts cre6s sont decrites, et le rBle de la simulation k l'ordinateur dans la comparaison de la thkorie et l'expkrience est discute.Abstract. -The damage processes involved in the penetration of an energetic ion in a crystalline solid are reviewed qualitatively. Different methods of studying the mechanisms of damage and defects created are described and the role of computer simulation in the comparison of theory and experiment is discussed.1. Introduction. -When an energetic heavy ion penetrates the surface of a crystal, it slows down by interaction with the atoms and electrons of the crystal. The damage mechanisms are extremely complicated and not fully understood [I], [2]. Elastic energy transfer processes, electronic excitation and ionisation play roles of varying importance depending on the energy of the incident ion and on the type of solid. Because of the many-body nature of the interaction with the nuclei and electrons it is difficult to formulate a completely reliable theory of the distribution of the energy loss between elastic and inelastic processes. Inelastic loss to electrons can cause damage to insulators and semiconductors, but in the case of metals this energy is largely dissipated as heat without causing any permanent detectable damage. The observable effects occur through the direct or indirect displacement of atoms of the solid from their equilibrium positions. These atoms come to rest as a result of interaction with other atoms and the initial energy of the incident ion is dissipated in a multiple atomic displacement event known as an atomic displacement cascade. When the kinetic energy of the displaced atoms drops to a value comparable with the thermal energy of the undisturbed crystal atoms the final configuration relaxes to a stable damage state which depends on the temperature, background defect concentration and electronic nature of the solid.In order to estimate the amount of damage it is necessary to study the dynamics of the multiple displacement process during its creation and its partial annealing. For the former it is necessary to know something about the inelastic loss to electrons and (*) Now at Energy Division, OECD, Paris 16=, France. about the elastic interaction potential between the atoms. The latter is governed by the thermal motion of the defects created by displacement, so that their activation energies for formation and migration and the binding energies between different types of defect should be known.To a certain extent it is possible to treat these problems by analytical means. A number of theories exist for describing the development of a displacement cascade in an amorphous solid, ranging from elementary descriptions [3], [4] to rather involved treatments requiring the use of a computer to solve the integral equations obtained [5]-171. So far, however, non...