Disorder scattering in mixed Pb_1−xSn_xTe‐type semiconductors

Abstract

BYIn multi-component mixed semiconducting c r y s t a l s treated in the virtual-crystal approximation /I/, the additional mechanism of c a r r i e r scattering appears due t o chemical disorder of component atoms. Disorder scattering was in-

Intraband Absorption Due to Alloy Scattering in Lead Chalcogenide Semiconductors

“…These par- Table 1 The parameters of samples (see [5, lo]) at 4.2 K. n electron concentration (in 10" ~m -~) , m l and mil effective masses at the conduction band edge, 2 5~ Fermi energy (energies in meV) ameters are the same as in [lo] in order to compare the results for inter-and intravalley transitions. We also take ern = 38, N = 1.5 x loz2 ~m -~, U, = 1.9UC, U , = = 3.9 x 10-23 eV cm3 (see [12]). Our calculations are performed for the case of a strongly degenerate electron gas.…”

Free-Carrier Absorption in Quantum Well Structures for Alloy-Disorder Scattering

“…An important scattering mechanism in ternaries is the alloy-disorder scattering [1][2][3][4]. Alloy-disorder scattering in quantum wells (QWs) and superlattice has been the subject of many theoretical investigations [5][6][7][8][9][10][11].…”

“…Developments in molecular beam epitaxy and modulation doping technique have made it possible to produce high quality heterojunctions and quantum wells involving binary and ternary compound semiconductors. However, among the thing that have yet to be fully understood are the varous scattering mechanisms, important among which, in ternaries, is alloy-disorder scattering [1][2][3][4]. Alloy-disorder scattering in quantum wells (QWs) and superlattice system has been the subject of many theoretical investigation [5][6][7][8][9].…”