Disorder produced in SiC by ion bombardment

Hart, R. R.; Dunlap, H. L.; Marsh, O. J.

doi:10.1080/00337577108231058

Cited by 85 publications

(16 citation statements)

References 9 publications

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“…However, much lower values in the range 17-30 eV have also been reported. 18 In a more recent work, Siegle et a l l 9 measured an energy threshold of about 25 eV in Sic. So, we used 25 eV as a lower limit for Eth and an upper limit of the theoretical ballistic mixing efficiency was thus determined as tb = 7 x 1 0 -~ nm5/eV.…”

Section: (4)mentioning

confidence: 98%

Thermodynamic effects on ion‐beam mixing in SiC–metal systems

Laidani¹,

Calliari

Kelly³

et al. 1994

Surface & Interface Analysis

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The ion-beam mixing of SiC-coated Fe, Cr, Ni, Cu, and stainless steel was investigated, by means of Auger electron spectroscopy, to determine the role of thermodynamics in the process. Both inert (Ar') and reactive (N') ions were used at either 30 keV or 160keV incident energy. A mechanism involving thermally activated motion of bombardment-induced defects appeared relevant to the onset of a chemical bias in the mixing. Further, the formalism established for describing ion mixing, based on Darken's analysis of chemical interdiffusion coefficients, provided a quantitative interpretation of the results.

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Section: (4)mentioning

confidence: 98%

Thermodynamic effects on ion‐beam mixing in SiC–metal systems

Laidani¹,

Calliari

Kelly³

et al. 1994

Surface & Interface Analysis

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“…As an alternative, ion implantation offers accurate control of both the dopant profile and depth, thus making possible the fabrication of planar SiC devices with tailored doped areas. Ion implantation of Sb + ions into Si, however, was found to produce considerable displacement of the lattice atoms, which increased with implantation and resulted in the formation of an amorphised layer at a dose of ∼10 14 /cm 2 [2].…”

Section: Introductionmentioning

confidence: 98%

Mössbauer study of 119 Sn in 119 In* implanted 3C-SiC

et al. 2011

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119 Sn Mössbauer measurements have been made on a 3C-SiC single crystal implanted with 60 keV precursor radioactive 119 In * ions at ISOLDE/CERN. Spectra collected at sample temperatures of 300-670 K have been analysed in terms of two single lines and a quadrupole split doublet, which based on their isomer shifts are assigned respectively to Sn ions located on substitutional Si sites (Sn Si ) and interstitial sites (Sn I ) and in defect complexes near substitutional sites. The substitutional Sn Si fraction increases from 25% at room temperature to 60% at 680 K.

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“…This is not the case of the example reported by Heera using the Hart data. 7 In fact the collision cascade generated by 40 keV Sb is very dense and several processes concur to generate the damage. In addition, recombination of defects ͑at least in Si͒ occurs at room temperature.…”

Section: G Grimaldi and L Calcagnomentioning

confidence: 99%