Thermodynamic effects on ion‐beam mixing in SiC–metal systems

Laidani, N.; Calliari, L.; Kelly, Roger; Miotello, A.

doi:10.1002/sia.740210608

Cited by 3 publications

(1 citation statement)

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“…[9,10] Argon atoms could be trapped in these defects resulting in the argon peaks. The defects trapping argon were greatly decreased www.interscience.wiley.com/journal/sia Annealing effects on hydrogen retention properties of C-90%SiC films after annealing at 873 K resulting in the great decrease in argon intensity within the transition layer.…”

Section: Resultsmentioning

confidence: 99%

Study in the effect of annealing on hydrogen retention properties of C‐90%SiC films

Ren

Zhang

Yang

et al. 2008

Surface & Interface Analysis

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Carbon-rich silicon carbide (C-90%SiC) films as hydrogen barriers were deposited on the surface of stainless steel substrates with magnetron sputtering, and then bombarded by argon ion beam. In order to remove the argon atoms reserved during films preparation, some samples with the prepared C-90%SiC films were thermally annealed for 30 min at 473, 673 and 873 K in vacuum, respectively. These samples together with the un-annealed ones were then irradiated by a 5 keV hydrogen ion beam. SEM was used to investigate the surface micrograph of those films and SIMS was used to measure the mass spectra of positive species and the depth distribution of argon and hydrogen in the samples. A remarkable decrease in hydrogen intensity in the substrates with annealing indicates that annealing for removing argon can effectively improve hydrogen retention properties of the C-90%SiC films.

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Section: Resultsmentioning

confidence: 99%