Disorder-induced nucleation in the nanocrystalline silicon film growth from chlorinated materials by rf plasma-enhanced chemical vapor deposition

Shirai, Hajime; Ito, T.; Ikeda, Yusuke

doi:10.1016/j.jnoncrysol.2004.02.033

Cited by 5 publications

(4 citation statements)

References 15 publications

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“…The Fourier transformed infrared (FT-IR) spectrum of fresh BUSiNPs (see Figure a) shows strong peaks due to surface absorbed TOAB (2954, 2922, 2851, 1468, 1089, 753, and 723 cm –1 ) and very small peaks at 520 and 545–580 cm –1 due to Si–Cl bending and Si–Cl stretching, respectively . Absorption peaks at 2100–2250 cm –1 expected for Si–H x stretching modes are absent.…”

Section: Resultsmentioning

confidence: 99%

Understanding the Parameters Affecting the Photoluminescence of Silicon Nanoparticles

et al. 2012

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Silicon nanoparticles of 1–5 nm size (SiNPs) were synthesized by a bottom-up (BU) approach involving a chemical wet method. The contribution of different emitters to the overall excitation–emission matrix was analyzed on the assumption that pure substances existing in a unique form show an excitation wavelength-invariant emission spectrum. The occurrence of emitters differing in size and aggregation was supported by transmission electron microscopy (TEM), small-angle X-ray scattering (SAXS), time-resolved single photon counting, and time-resolved anisotropy experiments. The effect on photoluminescence (PL) of the particle surface oxidation as a result of aging is studied and compared to that of surface oxidized particles obtained by a top-down (TD) approach following an electrochemical method with HF etching. Surface oxidation to SiO x seems to introduce two different effects on the SiNP PL. An emission originated in surface states associated to SiO x was identified and observed for SiNPs synthesized by both BU and TD approaches. Blue-shifted excitation–emission spectra associated to a silicon core in embedded SiO x nanostructures were also identified. Theoretical studies were carried out to help understand the observed results.

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Section: Resultsmentioning

confidence: 99%

Understanding the Parameters Affecting the Photoluminescence of Silicon Nanoparticles

et al. 2012

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“…In general, C n 1 and C n 2 had a good linear relationship [28,29]. According to equation (5), the slope of the straight line fit of C n 1 and C n 2 is just the value of the depletion fraction f . Obviously, the cross section of the neutral radical is a key parameter for deducing the depletion fraction of the plasma.…”

Section: Calculating Methods Of Radical Densitiesmentioning

confidence: 99%

“…The chlorinated silanes, i.e. SiH 2 Cl 2 , SiHCl 3 and SiCl 4 , have proved to be effective in the growth of crystal silicon and polycrystalline silicon film [3][4][5][6][7][8][9][10][11][12]. It is generally accepted that the major precursors of films deposited by SiCl 4 source gas are SiCl n (n = 0-2) radicals in plasma, while SiCl 3 , Cl and Cl 2 are the primary etchants of films [13][14][15][16].…”

Section: Introductionmentioning

confidence: 99%

Effects of hydrogen dilution on deposition process of nano-crystalline silicon film by SiCl₄/H₂plasma

Wang

Lou

Lin

et al. 2006

J. Phys. D: Appl. Phys.

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Growth of nano-crystalline silicon (nano-Si) films from hydrogen-diluted SiCl4 by the plasma enhanced chemical vapour deposition technique at 250 °C has been studied through mass spectrometry, Langmuir probe diagnostic techniques and Raman spectra measurements. The effects of the hydrogen dilution ratio on the relative densities of SiCln (n = 0–2) in SiCl4/H2 plasma are investigated. The average electron energy (Ee) and electron density (Ne) in SiCl4/H2 plasma increase with the hydrogen dilution ratio till their maxima at 9.25 eV and 3.7 × 109 cm−3, respectively. A suitable hydrogen dilution ratio R (0.4–0.67) is beneficial for the formation of SiCln (n = 0–2) radicals because Ee and Ne both have maxima in this range. More SiCln (n = 0–2) radicals will improve the deposition rate and film quality. In addition, hydrogen radicals play an important role in the surface reaction process. The reaction of H and SiCln (n = 0–2) on the growing surface is beneficial for creating dangling bond sites and prompting the film growth, and the exothermic reaction exothermic energy of H with Cl on the film-growing surface results in the increase of the effective temperature of the film growth.

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“…However, the film crystallization is promoted even at a low H 2 dilution condition in SiCl 4 . This is because the degree of disorder of the Si-network near the growing surface is greater in SiCl 4 than those in SiH 2 Cl 2[13,14]. As a consequence, the residual H and Cl concentrations in the incorporated a-Si phase or at the surface of nc-Si phase increase with increasing the volume fraction of c-Si phase f c-Si .…”

mentioning

confidence: 99%

Synthesis of novel p-type nanocrystalline silicon from SiH2Cl2 and SiCl4 by rf plasma-enhanced chemical vapor deposition

Ikeda

Toyoshima

et al. 2006

Thin Solid Films

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Disorder-induced nucleation in the nanocrystalline silicon film growth from chlorinated materials by rf plasma-enhanced chemical vapor deposition

Cited by 5 publications

References 15 publications

Understanding the Parameters Affecting the Photoluminescence of Silicon Nanoparticles

Understanding the Parameters Affecting the Photoluminescence of Silicon Nanoparticles

Effects of hydrogen dilution on deposition process of nano-crystalline silicon film by SiCl₄/H₂plasma

Synthesis of novel p-type nanocrystalline silicon from SiH2Cl2 and SiCl4 by rf plasma-enhanced chemical vapor deposition

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Disorder-induced nucleation in the nanocrystalline silicon film growth from chlorinated materials by rf plasma-enhanced chemical vapor deposition

Cited by 5 publications

References 15 publications

Understanding the Parameters Affecting the Photoluminescence of Silicon Nanoparticles

Understanding the Parameters Affecting the Photoluminescence of Silicon Nanoparticles

Effects of hydrogen dilution on deposition process of nano-crystalline silicon film by SiCl4/H2plasma

Synthesis of novel p-type nanocrystalline silicon from SiH2Cl2 and SiCl4 by rf plasma-enhanced chemical vapor deposition

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Effects of hydrogen dilution on deposition process of nano-crystalline silicon film by SiCl₄/H₂plasma