Dislocations and stresses in a crystal with an island film

Transmission electron microscopy (TEM) as well as X-ray topography (XRT) and X-ray diffractonietry have been used for investigation of the structure of the LPE heteroepitaxial system Ino.osG%.gsAs-InvGal -yAsl -,P,-GaAs( 11 l)A. A critical value of the lattice misfit has been shown to exist a t the metallurgical boundary ( ( A a / a ) * m which results in the change of the film nucleation and growth mechanism as well as the change of misfit dislocations (MDs) generation mechanism. With (&/a), > ( &/a) * the nucleation and growth mechanism is mixed: island growth a t the first stages of growth and layer-by-layer growth a t large thicknesses. MDs are created in an "island film" developing a non-ordered dislocation network. The density of threading dislocations ( N d ) is -lo8 cm-?. With ( d a / a ) , < (&/a) * there is layer-by-layer mechanism of film's nucleation and growthfrom the very first stages of crystallization. MDs are injected into continuous layer along the inclined slip planes { 11 l}, thus forming a regular three-dimensional grid of MDs. Nd is less than 106 c n -2 in the case. A model of dislocation structure formation in heterolayers has been proposed. Within the frame of this niodel the two critical values of phosphorus concentration in the quaternary melt have been quantitatively determined. These are corresponding to the change of MD generation mechanism. The expected values of Nd for ( da/a), > ( Aa/a) * and ( Aa/a), < ( d a / a )

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Effect of buffer layers on the dislocation structure of heteroepitaxial systems

Bolkhovityanov

Vaulin

Gutakovsky

et al. 1981

Cryst Res and Technol

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Dislocation interactions in germanium covered with dielectric films

Trukhanov

Stenin

Noskov

1979

Phys. Stat. Sol. (a)

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In the systems Ge (111)-amorphous film of SiO, or Si,N, interaction of two types of dislocations is investigated. The first are due t o substrate bending and the second are explained b y edge effects near film islands or sample edge. The interaction of the above dislocation types leads to the appearance of Lonier or 60" dislocations. Mutual position of dislocations, thickness, and the rigidity of film affect the reaction substantially. Dislocation multiplication processes in island structures are discussed and the stress level in the system is estimated.

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Some features of generation of misfit dislocations in Si during B diffusion from doped oxide

Trukhanov

Zsoldos

1981

Phys. Stat. Sol. (a)

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Misfit dislocations (MDs) generated by the glide of dislocations in the Si substrate during B diffusion from a doped pyrolytic oxide are observed by X‐ray topography. The stress level during their generation is estimated by various methods including the analysis of equilibrium dislocation configurations. The characteristic features of the dislocations are in good agreement with theoretical predictions [1]. The theory of formation of MDs from dislocations of the substrate is generalised for multilayer systems. It is shown that for the investigated system the formation of MDs is energetically favourable from the substrate, but not from the diffused layer.

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Dislocations and stresses in a crystal with an island film

Cited by 9 publications

References 11 publications

Effect of buffer layers on the dislocation structure of heteroepitaxial systems

Effect of buffer layers on the dislocation structure of heteroepitaxial systems

Dislocation interactions in germanium covered with dielectric films

Some features of generation of misfit dislocations in Si during B diffusion from doped oxide

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