Some features of generation of misfit dislocations in Si during B diffusion from doped oxide

Abstract

Misfit dislocations (MDs) generated by the glide of dislocations in the Si substrate during B diffusion from a doped pyrolytic oxide are observed by X‐ray topography. The stress level during their generation is estimated by various methods including the analysis of equilibrium dislocation configurations. The characteristic features of the dislocations are in good agreement with theoretical predictions [1]. The theory of formation of MDs from dislocations of the substrate is generalised for multilayer systems. It is shown that for the investigated system the formation of MDs is energetically favourable from the substrate, but not from the diffused layer.