Dislocation Substructures and Plasticity of GaAs below 400°C as a Function of Doping

Boivin, P.; Rabier, J.; Garem, H.

doi:10.4028/www.scientific.net/msf.10-12.781

Cited by 8 publications

(13 citation statements)

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“…cations belonging to the glide set; this is the case for GaAs, where leading and trailing partial pairs were observed [14,19,20]. In the present study on InSb, these perfect dislocations were not observed to be dissociated within the resolution of the WB technique (except at interaction nodes); this non-observable dissociation of screw dislocations is unexpected since several elemental and compound SCs (Si, SiC, GaAs) exhibit dissociated dislocations at HT.…”

Section: Discussioncontrasting

confidence: 48%

Plasticity of indium antimonide between −176°C and 400°C under hydrostatic pressure. Part II: Microscopic aspects of the deformation

Kedjar¹,

Thilly²,

Demenet³

et al. 2010

Acta Materialia

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Indium antimonide (InSb) has been plastically deformed over a wide temperature range, from 400 down to À176°C (see the companion paper: Kedjar B, Thilly L, Demenet JL, Rabier J. Acta Mater 2009) and transmission electron microscopy was used to characterize the deformation microstructures. In the ductile regime, i.e. T > T tr1 % 150°C, the crystal deforms via the nucleation and motion of perfect dislocations belonging to the glide set. In the brittle domain, i.e. for T < T tr1 % 150°C, two regimes are observed: for T tr2 % 20°C < T < T tr1 % 150°C, the crystal deformation takes place via the nucleation and glide of dissociated perfect dislocations or only leading partials, while for T < T tr2 % 20°C, the crystal deformation proceeds via the nucleation and motion of perfect dislocations belonging to the shuffle set. In view of these observations, the brittle-to-ductile transition (at T tr1 ) is confirmed to correspond to a change in the dislocation nature in the glide set, from partial-mediated plasticity at low temperature to perfect-mediated plasticity at high temperature. Another transition is observed at T tr2 and corresponds to the glide-to-shuffle transition which is observed experimentally for the first time in a III-V compound semiconductor.

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Section: Discussioncontrasting

confidence: 48%

Plasticity of indium antimonide between −176°C and 400°C under hydrostatic pressure. Part II: Microscopic aspects of the deformation

Kedjar¹,

Thilly²,

Demenet³

et al. 2010

Acta Materialia

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“…3͑b͒. These features are qualitatively very similar to the experimental observations in InP, 21 GaAs, 22 and SiC. The different slopes in the ln͑ c ͒ curve characterize the transition, and thus correspond to two different activation enthalpies, H t and H l , for dislocation glide in high-temperature ͑T Ͼ T c ͒ and low-temperature ͑T Ͻ T c ͒ regimes, respectively.…”

supporting

confidence: 82%

Atomistic simulation of brittle to ductile transition in GaN nanotubes

Wang

Gao

et al. 2006

Applied Physics Letters

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“…These results were corroborated by more recent work. [9][10][11][12] In other investigations, however, unusually high activation energies 13 or stress exponents [14][15][16][17] were reported. It has been argued 18 that this may be due to the fact, that the samples had been predeformed prior to the test deformation in order to achieve a homogeneous initial dislocation density or to shift the ductile-brittle transition to lower temperatures.…”

Section: Introductionmentioning

confidence: 90%

“…Such findings have to be taken into account in the literature, when ''effective'' yield stresses are deduced from strain-rate cycling experiments, 10,17 or stress exponents are derived from stressrelaxation tests. 16 Turning now to the temperature-change experiments, marked deviations from the behavior of as-grown material have to be realized. At first, in the Arrhenius plot of Fig.…”

Section: Predeformed Materialsmentioning

confidence: 99%

“…The ductile-brittle transition can be also shifted to room temperature by applying a confining pressure. [19][20][21] Under such low temperatures the underlying deformation mechanism seems to be different from those operating at higher temperatures; it is not further regarded here. On the other hand, there is a deformation regime usually emerging at rather high temperatures, 22,23 where the yield stress becomes independent on strain rate.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Yield point of as-grown and predeformed GaAs:Zn

Brion

Siethoff

1998

Journal of Applied Physics

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Articles you may be interested inOn the Fermi level pinning in as-grown GaInNAs(Sb)/GaAs quantum wells with indium content of 8%-32% J. Appl. Phys.Single crystals of highly Zn-doped GaAs are compressed along ͗123͘ in a constant strain-rate test at temperatures between 330 and 700°C. The yield point is studied for both the as-grown and the predeformed state, the latter achieved by strain-rate and temperature-change tests. For as-grown material two deformation regimes are established. At low temperatures the deformation is governed by a kink mechanism typical for tetrahedrally coordinated semiconductors. The activation energy and the stress exponent are deduced as Uϭ1.44 eV and nϭ3.0, respectively. These values are similar to those obtained for undoped GaAs, thus indicating that Zn additions do not appreciably influence the activation energies of kink formation and migration. Nevertheless, a strong efficiency of Zn for locking dislocations in GaAs is observed. At higher temperatures a different regime emerges, which has been also observed in other highly doped semiconductors, the basic mechanism of which, however, has not yet been elucidated. Material predeformed in the temperature-change test exhibits characteristic deviations. In these experiments the crystals behave as if the point-defect concentration or the locking efficiency of obstacles had been appreciably increased on account of predeformation.

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Dislocation Substructures and Plasticity of GaAs below 400°C as a Function of Doping

Cited by 8 publications

References 0 publications

Plasticity of indium antimonide between −176°C and 400°C under hydrostatic pressure. Part II: Microscopic aspects of the deformation

Plasticity of indium antimonide between −176°C and 400°C under hydrostatic pressure. Part II: Microscopic aspects of the deformation

Atomistic simulation of brittle to ductile transition in GaN nanotubes

Yield point of as-grown and predeformed GaAs:Zn

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