Dislocation Structure and Motion in CdS Crystals

Abstract

The motion, multiplication, and annihilation of dislocations are observed in situ by means of a space resolved photoluminescence method at T = 77 to 4.2 K and deformation of the CdS crystals on prismatic glide system. The mechanism of dislocation multiplication and motion is discussed. For the first time the real dislocation structure and its features in deformed crystals on basal dislocation glide system are identified.

Asymmetry of the Atomic Core Structure of Dissociated a‐Screw Dislocation in GaN Probed by Polarization Optical Spectroscopy

“…Luminescence of screw dislocations was reported not only for GaN but also for II–VI wurtzite‐type semiconductors that are most investigated in CdS . DRL in strain‐free CdS was found to be isotropic in (0001) plane, but polarization anisotropy in that plane appeared only under the application of external strain or in highly strained region near the dislocation rosette .…”

Recombination-enhanced Dislocation Glides—The Current Status of Knowledge

“…A common feature in Table I is that the reduction of activation energy E is in all cases smaller than the bandgap energy E g . (a) Dissociation of a basal perfect dislocation with a Burgers vector b=a/3 [11][12][13][14][15][16][17][18][19][20] into two Shockley partial dislocations with Burgers vectors b 1 and b 2 . The expansion of stacking faults (SF) on the basal plane (the sheet plane) achieved by enhanced glide of 30º-Si(g) partial dislocations in 4H-SiC p-i-n device structures [based on [29] but modified].…”

“…Regarding electronic properties of dislocations, tremendous efforts have been devoted to detect the electronic energy levels associated with dislocations in semiconductors [32] not only in the context of REDG effects but also in attempts to understand the usually harmful effects of dislocations in electronic devices. But in some cases such as CdS [20] and SiC [10], gliding dislocations are observed in luminescent contrasts. The most straightforward method to investigate the non-radiative activity of dislocations is cathodoluminescence imaging in scanning electron microscopy (SEM-CL) in which the dislocations are often observed as dark spots or dark lines in the luminescent background matrix.…”

Dislocation emission caused by different types of nanoscale deformation defects in CdTe

“…Dislocation-related electronic states induced by dislocation motion in II-VI semiconductors are investigated for a long time due to their importance in solid state physics and for potential industrial applications [1][2][3].…”