Dislocation Related Issues in the Degradation of GaN-Based Laser Diodes

Tomiya, Shigetaka; Hino, T.; Goto, Shu; Takeya, M.; Ikeda, Masao

doi:10.1109/jstqe.2004.837735

Cited by 127 publications

(70 citation statements)

References 22 publications

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“…k was found to vary between 0.3 and 0.5, which is consistent with previous studies suggesting that degradation is due to a defects-impurities diffusion process in the active region, with subsequent worsening of the optical properties of the device [2,3]. On the other hand, no strong modification was detected in the slope efficiency of the samples during aging, as shown in Fig.…”

Section: Methodssupporting

confidence: 91%

Degradation mechanisms and lifetime of state‐of‐the‐art green laser diodes

Marioli

Meneghini

Rossi

et al. 2015

Physica Status Solidi (a)

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This paper presents a detailed analysis of the degradation kinetics and of the reliability of state-of-the-art InGaN-based green laser diodes (LDs), submitted to CW stress tests at different operating conditions. Results described in the following indicate that: (i) constant current stress induces an increase in threshold current (Ith), which is well correlated to a decrease in the sub-threshold emission; (ii) the Ith increase has a power law dependence on stress time; (iii) the degradation rate is strongly dependent on the stress current level while it does not significantly depend on the optical field in the cavity; (iv) stress temperature acts as an accelerating factor for LDs degradation; the activation energy of the degradation process is equal to 258 meV; (v) pure thermal storage does not induce a significant degradation of device characteristics. Cathodoluminescence measurements were carried out to get more insight into the physical origin of the degradation process

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Section: Methodssupporting

confidence: 91%

Degradation mechanisms and lifetime of state‐of‐the‐art green laser diodes

Marioli

Meneghini

Rossi

et al. 2015

Physica Status Solidi (a)

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“…3 High dislocation density and related issues in GaN are one among few of the major hindrances for the application as blue laser. 4 Thus, removal of stress is one of the prime objectives for opto-electronic device applications in GaN. A combination of biaxial and hydrostatic stresses originating form dislocation related extended defects and point defects,…”

mentioning

confidence: 99%

Recrystallization of epitaxial GaN under indentation

Dhara

Das

Hsu

et al. 2008

Applied Physics Letters

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We report recrystallization of epitaxial (epi-) GaN(0001) film under indentation.Hardness value is measured ~10 GPa, using a Berkovich indenter. 'Pop-in' burst in the loading line indicates nucleation of dislocations setting in plastic motion of lattice atoms under stress field for the recrystallization process. Micro-Raman studies are used to identify the recrystallization process. Raman area mapping indicates the crystallized region. Phonon mode corresponding to E 2 (high) ~570 cm -1 in the as-grown epi-GaN is redshifted to stress free value ~ 567 cm -1 in the indented region. Evolution of A 1 (TO) and E 1 (TO) phonon modes are also reported to signify the recrystallization process.

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“…Therefore, the degradation mechanism seems to be intrinsic. However, the life time seems to be strongly dependent on the initial current, which is pointing to a current enhanced degradation as it has been observed by other before [5,6]. The usual finding is that the lifetime increases by a factor of more than ten, if one decreases the operation current to half the value [7].…”

Section: Lifetime Measurementsmentioning

confidence: 62%