Dislocation interaction of layers in the Ge/Ge-seed/Ge Si1−/Si(0 0 1) (x∼ 0.3–0.5) system: Trapping of misfit dislocations on the Ge-seed/GeSi interface

Bolkhovityanov, Yu. B.; Deryabin, A. S.; Гутаковский, А. К.; Соколов, Л. В.; Василенко, А. Т.

doi:10.1016/j.actamat.2013.05.028

Cited by 12 publications

(4 citation statements)

References 24 publications

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“…In Figure 1c,d we report initial and final condition of a simulation on the same SiGe/Si system discussed above but by taking in this case 14 dislocations with an equal distribution between the b 1 and b 2 Burgers vectors. In this situation, as discussed in Section 2, we also modeled the reaction between two defects with different b into a single edge dislocation [50,51]. In this case, different local energy minima can be found depending on the starting condition, and the result of Figure 1d represents the lowest-energy configuration found.…”

Section: Constant Composition Layermentioning

confidence: 99%

Computational Analysis of Low-Energy Dislocation Configurations in Graded Layers

2020

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Graded layers are widely exploited in semiconductor epitaxy as they typically display lower threading dislocation density with respect to constant-composition layers. However, strain relaxation occurs via a rather complex distribution of misfit dislocations. Here we exploit a suitable computational approach to investigate dislocation distributions minimizing the elastic energy in overcritical constant-composition and graded layers. Predictions are made for SiGe/Si systems, but the methodology, based on the exact (albeit in two dimensions and within linear elasticity theory) solution of the stress field associated with a periodic distribution of defects, is general. Results are critically compared with experiments, when possible, and with a previous mean-field model. A progressive transition from one-dimensional to two-dimensional distributions of defects when continuous linear grading is approached is clearly observed. Interestingly, analysis of the low-energy distribution of dislocations reveals close analogies with typical pile-ups as produced by dislocation multiplication.

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Section: Constant Composition Layermentioning

confidence: 99%

Computational Analysis of Low-Energy Dislocation Configurations in Graded Layers

2020

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“…This is because during the growing of heterostructures, an ordered edge misfit dislocations (MDs) grid is formed at the interfaces. The edge MDs of a rough Ge/Si 0.2 Ge 0.8 interface that rapidly formed are sessile dislocations, which cannot penetrate through the buffer layer to the Ge buffer/Si interface by means of gliding [ 32 ].…”

Section: Resultsmentioning

confidence: 99%

Strained Si0.2Ge0.8/Ge multilayer Stacks Epitaxially Grown on a Low-/High-Temperature Ge Buffer Layer and Selective Wet-Etching of Germanium

et al. 2020

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With the development of new designs and materials for nano-scale transistors, vertical Gate-All-Around Field Effect Transistors (vGAAFETs) with germanium as channel materials have emerged as excellent choices. The driving forces for this choice are the full control of the short channel effect and the high carrier mobility in the channel region. In this work, a novel process to form the structure for a VGAA transistor with a Ge channel is presented. The structure consists of multilayers of Si0.2Ge0.8/Ge grown on a Ge buffer layer grown by the reduced pressure chemical vapor deposition technique. The Ge buffer layer growth consists of low-temperature growth at 400 °C and high-temperature growth at 650 °C. The impact of the epitaxial quality of the Ge buffer on the defect density in the Si0.2Ge0.8/Ge stack has been studied. In this part, different thicknesses (0.6, 1.2 and 2.0 µm) of the Ge buffer on the quality of the Si0.2Ge0.8/Ge stack structure have been investigated. The thicker Ge buffer layer can improve surface roughness. A high-quality and atomically smooth surface with RMS 0.73 nm of the Si0.2Ge0.8/Ge stack structure can be successfully realized on the 1.2 µm Ge buffer layer. After the epitaxy step, the multilayer is vertically dry-etched to form a fin where the Ge channel is selectively released to SiGe by using wet-etching in HNO3 and H2O2 solution at room temperature. It has been found that the solution concentration has a great effect on the etch rate. The relative etching depth of Ge is linearly dependent on the etching time in H2O2 solution. The results of this study emphasize the selective etching of germanium and provide the experimental basis for the release of germanium channels in the future.

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“…Как ранее было показано [7,8,15,16], при отжиге дислокационные дефекты ломеровского типа перерас- пределяются на двух гетерограницах таким образом, что происходит компенсация несоответствия буферного слоя. При этом, в процессе перемещения части дефектов с границы Ge/GeSi в границу GeSi/Si происходит уменьшение доли дислокаций с компактным ядром в пользу "…”

Section: результатыunclassified

“…рыхлых" дислокаций, обладающих ядром в 2−6 nm [8,15,16]. Несмотря на увеличение расстояния между 60 • -ми дислокациями, образующими краевую дислокацию, в целом, большинство 60 • -х дислокаций не теряют связи, а образуют рыхлый дефект, перемещающийся как единое целое, по механизму, описанному в [16].…”

Section: результатыunclassified

Образование дислокационных пар в гетероструктуре Ge/GeSi/Si(001)

Болховитянов¹,

Гутаковский²,

Дерябин³

et al. 2019

Физика Твердого Тела

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In the Ge/LTGe/GeSi/Si(001) heterostructures, the GeSi buffer layer remains pseudomorphic in a certain range of the heterostructure parameters and growth regimes, while the Ge film is completely relaxed owing to the edge dislocation network at the Ge/GeSi interface. It has been experimentally shown that, along with edge dislocations, dislocations with the Burgers vectors of the a _0〈100〉-type form. Their formation is caused by the reaction of 60° dislocations with a unidirectional screw component. In this case, if during the buffer layer relaxation the edge dislocations split with the formation of an edge-type dislocation complex, in which the 60° dislocations remained bound, the dislocations with the Burgers vectors a _0〈001〉 split into two independent 60° dislocations.

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Dislocation interaction of layers in the Ge/Ge-seed/Ge Si1−/Si(0 0 1) (x∼ 0.3–0.5) system: Trapping of misfit dislocations on the Ge-seed/GeSi interface

Cited by 12 publications

References 24 publications

Computational Analysis of Low-Energy Dislocation Configurations in Graded Layers

Computational Analysis of Low-Energy Dislocation Configurations in Graded Layers

Strained Si0.2Ge0.8/Ge multilayer Stacks Epitaxially Grown on a Low-/High-Temperature Ge Buffer Layer and Selective Wet-Etching of Germanium

Образование дислокационных пар в гетероструктуре Ge/GeSi/Si(001)

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