Dislocation-Induced Defect Levels in Silicon

Staiger, W.; Pfeiffer, G.; Weronek, K.; Höpner, A.; Weber, Jens

doi:10.4028/www.scientific.net/msf.143-147.1571

Cited by 11 publications

(4 citation statements)

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“…Although DLTS levels are detected in the upper half of the gap, they do not appear to be correlated with the optical bands. Staiger et al [27] found that as-deformed n-Si has a dominant electron trap (probably an acceptor) at E c − 0.32 eV. This was shifted by Cu doping to E c − 0.59 eV, and eliminated by hydrogenation.…”

Section: Discussionmentioning

confidence: 99%

Optical bands related to dislocations in Si

Blumenau

Jones

Öberg

et al. 2000

J. Phys.: Condens. Matter

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Section: Discussionmentioning

confidence: 99%

Optical bands related to dislocations in Si

Blumenau

Jones

Öberg

et al. 2000

J. Phys.: Condens. Matter

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“…In particular, the effect of transition metal [3,4] or hydrogen impurities [5,6] has been extensively studied. However, the effect of oxygen has been the object of less attention although it is one of the most important impurities in Si.…”

Section: Introductionmentioning

confidence: 99%

Oxygen Effect on Electrical and Optical Properties of Dislocations in Silicon

Feklisova

Mariani-Regula²,

Pichaud

et al. 1999

phys. stat. sol. (a)

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“…9] not many papers can be found in the literature which concerns photoluminescence investigations of Cu decorated dislocations in Si. The partial passivation of the D-band luminescence (especially D4 line) was observed at Cu doping of sample [10] and a complete passivation of DRL bands was achieved at higher Cu concentration [11]. In a recent contribution [12] we investigated an influence of Cu at low contamination level on the DRL.…”

Section: Introductionmentioning

confidence: 99%

Peculiarities of Dislocation Related D1/D2 Bands Behavior under Copper Contamination in Silicon

Tereshchenko

Steinman

2007

SSP

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In this paper we present a detailed investigation of peculiarities of dislocation related D1/D2 bands behavior in silicon doped with Cu. For this purpose float zone grown (FZ) p-type silicon with B-doping 2.85·1015cm-3 was deformed by 3-point bending method at 950flC up to dislocation density of 2±0.2·106 cm-2. The deformed samples were contaminated with Cu up to several concentrations from 6·1013 cm-3 to 5·1016 cm-3. The variation in dislocation related spectra were traced after different thermal treatments. A decrease of D1/D2 bands intensity in quenched samples was observed even after their storage at room temperature. Taking into account the fact that Cu has a high mobility even at room temperature the decrease of D1/D2 bands intensity can be attributed to passivation of corresponding luminescence centers by Cu atoms. The influence of Cu contamination on D2 band is much more complicated as compared to D1 band. New line in position about 883 meV was observed as a result of storage of samples at room temperature and subsequent isochronous anneals. It was observed that D1/D2 band luminescence sharply increased in 30K – 50K range in samples with high Cu doping level. In addition the line in about 830 meV position became stronger at these temperatures whereas its intensity was negligible at 6K.

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Dislocation-Induced Defect Levels in Silicon

Cited by 11 publications

References 0 publications

Optical bands related to dislocations in Si

Optical bands related to dislocations in Si

Oxygen Effect on Electrical and Optical Properties of Dislocations in Silicon

Peculiarities of Dislocation Related D1/D2 Bands Behavior under Copper Contamination in Silicon

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