Dislocation generation mechanisms in heavily boron-doped diamond epilayers

Araújo, D.; Lloret, F.; Alba, G.; Alegre, M. P.; Villar, M. P.

doi:10.1063/5.0031476

Cited by 9 publications

(2 citation statements)

References 21 publications

(29 reference statements)

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“…However, in the case of diamond, proximity effects concerning boron atoms in a closed diamond lattice have been shown to also be effective for that. Therefore, not only a critical thickness is taken into account, but a critical boron content can also be defined [38,39,113], which is of maximum interest to diamond growers. Introduction of other dopants, such as P, also induces defect formation, as can be seen in Figure 6 where a diffraction contrast TEM micrograph is shown.…”

Section: Structural Characterization Techniquesmentioning

confidence: 99%

Diamond for Electronics: Materials, Processing and Devices

et al. 2021

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Progress in power electronic devices is currently accepted through the use of wide bandgap materials (WBG). Among them, diamond is the material with the most promising characteristics in terms of breakdown voltage, on-resistance, thermal conductance, or carrier mobility. However, it is also the one with the greatest difficulties in carrying out the device technology as a result of its very high mechanical hardness and smaller size of substrates. As a result, diamond is still not considered a reference material for power electronic devices despite its superior Baliga’s figure of merit with respect to other WBG materials. This review paper will give a brief overview of some scientific and technological aspects related to the current state of the main diamond technology aspects. It will report the recent key issues related to crystal growth, characterization techniques, and, in particular, the importance of surface states aspects, fabrication processes, and device fabrication. Finally, the advantages and disadvantages of diamond devices with respect to other WBG materials are also discussed.

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Section: Structural Characterization Techniquesmentioning

confidence: 99%

Diamond for Electronics: Materials, Processing and Devices

et al. 2021

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“…Defects and doping are still likewise important topics. In this context, Araujo et al 42 report a comprehensive study on the dislocation generation mechanisms in heavily boron-doped diamond epilayers, establishing conditions to grow dislocation-free boron-doped diamond epilayers on undoped substrates. Lloret et al 43 propose a strategy to perform selectively boron-doped homoepitaxial diamond growth for electronic devices.…”

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confidence: 99%