Dislocation density-dependent quality factors in InGaN quantum dot containing microdisks

El-Ella, Haitham A. R.; Rol, Fabian; Kappers, Menno J.; Russell, Kasey J.; Hu, Evelyn L.; Oliver, Rachel A.

doi:10.1063/1.3567545

Cited by 10 publications

(15 citation statements)

References 19 publications

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“…Thomas Swan close-coupled showerhead reactor on sapphire (0001) substrates with a miscut of (0.25 70.10)1 towards (11)(12)(13)(14)(15)(16)(17)(18)(19)(20) (TMG), trimethylindium (TMI), and ammonia were used as precursors. The pseudo-substrates consist of approximately 4.5 mm of GaN grown at 1020 1C, following deposition of a 30 nm GaN buffer layer at 540 1C [13].…”

Section: Methodsmentioning

confidence: 99%

“…These droplets then re-react with ammonia during the growth of the GaN cap, to form InGaN QDs. QDs formed in this way have been shown to act as single photon emitters [10] and have been successfully incorporated into micro-cavity structures exploiting the AlN/GaN distributed Bragg reflectors [11] and microdisks [12], which allows more efficient light extraction from the QD layer.…”

Section: Introductionmentioning

confidence: 99%

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Growth and optical characterisation of multilayers of InGaN quantum dots

Zhu

El-Ella

Reid

et al. 2012

Journal of Crystal Growth

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Growth and optical characterisation of multilayers of InGaN quantum dots

Zhu

El-Ella

Reid

et al. 2012

Journal of Crystal Growth

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“…To pattern the template is a rather complex technique and is hard to be used in the manufacture industrial production. Oliver et al reported the realization of micro-disk InGaN laser on sapphire substrates via growth interruption method [21]. Other research groups also employ the similar growth interruption methods to improve the optical properties of light emitting devices [22][23][24][25].…”

Section: Introductionmentioning

confidence: 99%

Surface morphology and optical properties of InGaN quantum dots with varying growth interruption time

Jin

Han

et al. 2019

Mater. Res. Express

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The effect of different growth interruption time on the surface morphology and optical properties of InGaN quantum dots (QDs) grown on 2-inch silicon substrates is investigated. The surface becomes rougher and the photoluminescence intensity has been enhanced significantly when employing the growth interruption method. Temperature-dependent photoluminescence and excitation powerdependent photoluminescence both present unchanged peak energy and line-width of QDs. The sharp increase of PL intensity in medium temperature regime is attributed to the fingerprint of the existence of InGaN QDs. The shape of the QDs are further confirmed by the transmission electron microscopy with a size of 3 nm by 4 nm. Among the samples, a growth interruption time of 30 s gives the best optical performance.

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“…On the other hand, GaN‐based structures considerably suffer from a limited applicability or even failure of methods like (selective) wet or reactive ion etching to prepare small structures with large aspect ratios. In the last years, a photoelectrochemical etching process has been developed which can be applied to slab‐like structures like microdisk resonators 10 showing blue lasing at RT 28 and high‐ Q values with implemented InGaN QDs 29, or photonic crystal defect cavities with InGaN QWs 30 and GaN QDs 31. But there is still a lack of technological methods to realize pillar MCs.…”

Section: Introductionmentioning

confidence: 99%

Microphotoluminescence studies on GaN‐based airpost pillar microcavities containing InGaN quantum wells and quantum dots

Sebald¹,

Lohmeyer²,

Kalden³

et al. 2011

Physica Status Solidi (b)

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We report on the optical properties of monolithic GaN-based airpost pillar microcavities (MCs) with embedded InGaN quantum wells or quantum dots (QDs), respectively. The presented MCs are designed by use of different kinds of distributed Bragg reflectors consisting of either AlGaN/GaN, AlInN/GaN, or superlattices of AlN/InGaN and GaN. A quality factor of up to Q ¼ 260 has been achieved. Airpost pillar MCs, providing a three-dimensional optical confinement, are realized by focused ion beam etching starting from an all-epitaxially grown vertical-cavity surface-emitting laser structure. Pillar diameters below 1 mm are well controllable. The sidewalls are smooth and show a damaged surface layer of a thickness less than 2 nm only. Microphotoluminescence (m-PL) measurements reveal the longitudinal and transversal mode spectra of the cavities in good agreement with theoretical calculations based on a vectorial transfer-matrix method. Furthermore, the spectra of the QD based samples reveal distinct spectrally sharp emission lines around 2.73 eV which can be attributed to the emission of single-InGaN QDs and traced up to 120 K.Scanning electron micrograph of a GaN-based airpost pillar superimposed by the m-PL spectrum of a pillar with a diameter of d ¼ 1.8 mm. The measurement performed at T ¼ 150 K reveals the discrete resonator modes.

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Dislocation density-dependent quality factors in InGaN quantum dot containing microdisks

Abstract: Published Version

Cited by 10 publications

References 19 publications

Growth and optical characterisation of multilayers of InGaN quantum dots

Growth and optical characterisation of multilayers of InGaN quantum dots

Surface morphology and optical properties of InGaN quantum dots with varying growth interruption time

Microphotoluminescence studies on GaN‐based airpost pillar microcavities containing InGaN quantum wells and quantum dots

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