Dislocation-controlled microscopic mechanical phenomena in single crystal silicon under bending stress at room temperature

Yamaguchi, H.; Tatami, Junichi; Yahagi, Tsukaho; Nakano, Hiromi; Iijima, Motoyuki; Takahashi, Tatsuhiro; Kondo, Toshiyuki

doi:10.1007/s10853-020-04528-3

Cited by 15 publications

(14 citation statements)

References 54 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Observations via TEM show a certain extension (from tens of nm to hundreds of nm) of such glide dislocations (Figure 20). [131] Namely, any dislocations dissociate into two Shockley partial dislocations having Burgers vectors of the type (a/6) <112>, and (a/6) <2-1-1> with 30° or 90° with respect to their dislocation lines. [123] The latter have Burger vectors perpendicular to the dislocation line introducing normal strain, which is compressive above and tensile below the glide plane.…”

Section: Line Defectsmentioning

confidence: 99%

See 2 more Smart Citations

Lattice Strain and Defects Analysis in Nanostructured Semiconductor Materials and Devices by High‐Resolution X‐Ray Diffraction: Theoretical and Practical Aspects

et al. 2021

View full text Add to dashboard Cite

The reliability of semiconductor materials with electrical and optical properties are connected to their structures. The elastic strain field and tilt analysis of the crystal lattice, detectable by the variation in position and shape of the diffraction peaks, is used to quantify defects and investigate their mobility. The exploitation of high‐resolution X‐ray diffraction‐based methods for the evaluation of structural defects in semiconductor materials and devices is reviewed. An efficient and non‐destructive characterization is possible for structural parameters such as, lattice strain and tilt, layer composition and thickness, lattice mismatch, and dislocation density. The description of specific experimental diffraction geometries and scanning methods is provided. Today's X‐ray diffraction based methods are evaluated and compared, also with respect to their applicability limits. The goal is to understand the close relationship between lattice strain and structural defects. For different material systems, the appropriate analytical methods are highlighted.

show abstract

Section: Line Defectsmentioning

confidence: 99%

Section: Line Defectsmentioning

confidence: 99%

See 1 more Smart Citation

Lattice Strain and Defects Analysis in Nanostructured Semiconductor Materials and Devices by High‐Resolution X‐Ray Diffraction: Theoretical and Practical Aspects

et al. 2021

View full text Add to dashboard Cite

show abstract

“…The microcantilever beam method is an effective technique to evaluate the local mechanical properties of ceramics under bending stress. 14,[22][23][24][25] The advantage of this approach is the clarification of the whole deformation and fracture process until the final failure. Tatami, et al 22 investigated the fracture strength of polycrystalline Si 3 N 4 ceramics as well as the fracture toughness of their grains and grain boundaries using microcantilever beam specimens obtained by direct sampling from bulk Si 3 N 4 ceramics through focused ion beam (FIB) technique.…”

Section: Introductionmentioning

confidence: 99%

Deformation behaviors and fracture strength of β$\ubeta$‐Si₃N₄ single crystals

et al. 2023

Self Cite

View full text Add to dashboard Cite

In this study, the yield stress and fracture strength of β$\ubeta$‐Si3N4 single crystals were directly measured by bending tests of microcantilever beam specimens that were prepared by a focused ion beam method. The β$\ubeta$‐Si3N4 single crystals were plastically deformed at room temperature under high bending stress, and the yield stress depended on the crystal orientation. Transmission electron microscopy observation of the specimens after bending tests indicates that the plastic deformation resulted from dislocations in the primary slip system false{10true1¯0false}$\{ 10\bar{1}0\} $<0001>, and the critical resolved shear stress of this slip system determined from the yield stress was 1.34 GPa. The fracture strength of β$\ubeta$‐Si3N4 single crystals ranged approximately up to 20 GPa, depending on the crystal orientation as with the yield stress. The fracture behavior of β$\ubeta$‐Si3N4 single crystals was discussed in terms of the accumulation of dislocations.

show abstract

“…[ 13 ] Recently, it was found that dislocations also play an important role in the microscopic mechanical behaviors of bending single‐crystal silicon. [ 14 ] Hence, various methods have been developed to test the damaged layer. Cross‐sectional polishing has been used to investigate the density and length of cracks in the subsurface, and it shows that the density of cracks is 6–8 mm/edge, [ 10 ] with a mean length of 4–7 μm.…”

Section: Introductionmentioning

confidence: 99%

Microdefect Characteristics in Cast‐Mono Silicon Wafers Induced by Slurry Sawing

Jin

et al. 2020

Physica Status Solidi (a)

View full text Add to dashboard Cite

Cast‐mono crystalline silicon (CM‐Si) wafer is a new promising material for the fabrication of silicon solar cells. This study demonstrates the characteristics and distribution behaviors of microdefects in the damaged layer of CM‐Si wafer induced by slurry sawing using the transmission electron microscopy (TEM) method. It is found that a large number of stacking faults and dislocations are formed around the sharp kerfs caused by the indenting effect of sharp grits, which is associated with the release of remaining stress after the propagation of micro cracks. Meanwhile, amorphous silicon phase appears in the round kerf region induced by round grits, without any crystalline defects around. It indicates that plastic deformation is an important way to release the strain in the brittle silicon material during slurry sawing. In addition, nano cracks coated with silicon oxide layer and originated from the piling‐up of dense edge dislocations can be observed beneath the smooth surface of slurry‐sawn wafers. These results help us better to understand the generation mechanism of microdefects during slurry sawing process.

show abstract

Dislocation-controlled microscopic mechanical phenomena in single crystal silicon under bending stress at room temperature

Cited by 15 publications

References 54 publications

Lattice Strain and Defects Analysis in Nanostructured Semiconductor Materials and Devices by High‐Resolution X‐Ray Diffraction: Theoretical and Practical Aspects

Lattice Strain and Defects Analysis in Nanostructured Semiconductor Materials and Devices by High‐Resolution X‐Ray Diffraction: Theoretical and Practical Aspects

Deformation behaviors and fracture strength of β$\ubeta$‐Si₃N₄ single crystals

Microdefect Characteristics in Cast‐Mono Silicon Wafers Induced by Slurry Sawing

Contact Info

Product

Resources

About

Dislocation-controlled microscopic mechanical phenomena in single crystal silicon under bending stress at room temperature

Cited by 15 publications

References 54 publications

Lattice Strain and Defects Analysis in Nanostructured Semiconductor Materials and Devices by High‐Resolution X‐Ray Diffraction: Theoretical and Practical Aspects

Lattice Strain and Defects Analysis in Nanostructured Semiconductor Materials and Devices by High‐Resolution X‐Ray Diffraction: Theoretical and Practical Aspects

Deformation behaviors and fracture strength of β$\ubeta$‐Si3N4 single crystals

Microdefect Characteristics in Cast‐Mono Silicon Wafers Induced by Slurry Sawing

Contact Info

Product

Resources

About

Deformation behaviors and fracture strength of β$\ubeta$‐Si₃N₄ single crystals