Discrimination and detection limits of secondary phases in Cu2ZnSnS4 using X-ray diffraction and Raman spectroscopy

Properties and characterization of CZTS nanoparticles prepared by microwave heating irradiation

“…A broad doublet near 1354-1404 and 1564-1597 cm -1 is associated with bands D and G of disordered carbon, respectively [34]. A relatively narrow peak near 336 cm -1 belongs to the symmetry band A of the Cu 2 ZnSnS 4 (CZTS) compound [35][36][37]. This mode implies movement of the sulphur atoms only [36].…”

“…A relatively narrow peak near 336 cm -1 belongs to the symmetry band A of the Cu 2 ZnSnS 4 (CZTS) compound [35][36][37]. This mode implies movement of the sulphur atoms only [36]. Several components of lower intensity are visible in a frequency region of 200-430 cm -1 (Fig.…”

Optimization of Cu2ZnSnS4 Absorber Layers via Sulfurization of Electrodeposited Cu-Zn-Sn Precursors for Photovoltaic Applications

“…Since the absorber layer is the site where electron-hole pairs are generated and successively diffuse to the p-n junction, it is, the key component that determines the efficiency limitations. The drawbacks of the CZTS absorber layers in enabling a long free path for the minority carriers are unique structural inhomogeneities, such as the coexistence of ordered and disordered type kesterite phase, and phase inhomogeneity due to the narrow equilibrium stability region of pure CZTS [27][28][29]. Besides the above issues, there are some obstacles related to solar cells manufacturing, such as the ability to grow a continuous film without pinholes to prevent shorting the solar cell circuit.…”

“…Distinguishing kesterite type and stannite type structures with conventional X-ray diffraction method is almost impossible, because the main Bragg peaks are the same due to the similar structural configuration. [29] The only difference between the two phases consists in the additional reflections which occur due to the ordered distribution of cations (the superstructure reflections). However, these reflections have low intensity and they may not be detected for some CZTS materials.…”

“…The low open circuit voltage observed in these CZTS materials is attributed to the presence of secondary phases and structural inhomogeneities, which arise from non-uniform compositional distribution [26,29,90].…”