Discovery of superconductivity in KTaO3 by electrostatic carrier doping

Ueno, Kazunori; Nakamura, Shintaro; Shimotani, Hidekazu; Yuan, Huatang; Kimura, Noriaki; Nojima, Tsutomu; Aoki, H.; Iwasa, Yoshihiro; Kawasaki, Masashi

doi:10.1038/nnano.2011.78

Cited by 454 publications

(408 citation statements)

References 25 publications

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“…Further work allowed superconductivity in the incipient ferroelectric KTaO 3 to be induced [10]. This amazing technique allowing very large changes in sheet carrier densities at surfaces creates a pathway for fieldgating developments in many other insulating compounds.…”

Section: Surface-induced Superconductivitymentioning

confidence: 99%

“…Evidence for high T c superconductivity has also been reported for FeSe atomically thin films prepared on SrTiO 3 [8]. Using the electrical double layer transistor (EDLT) technique, which allows one to achieve very large changes in carrier density, it is possible to induce superconductivity at the surface of insulating crystals [9] and to dramatically tune the value of the superconducting T c at the surface of known superconductors [10].…”

Section: Introductionmentioning

confidence: 99%

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Interface superconductivity

Gariglio

Gabay

Mannhart

et al. 2015

Physica C: Superconductivity and its Applications

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Low dimensional superconducting systems have been the subject of numerous studies for many years. In this article, we focus our attention on interfacial superconductivity, a field that has been boosted by the discovery of superconductivity at the interface between the two band insulators LaAlO 3 and SrTiO 3 .We explore the properties of this amazing system that allows the electric field control and on/off switching of superconductivity. We discuss the similarities and differences between bulk doped SrTiO 3 and the interface system and the possible role of the interfacially induced Rashba type spin-orbit. We also, more briefly, discuss interface superconductivity in cuprates, in electrical double layer transistor field effect experiments, and the recent observation of a high T c in a monolayer of FeSe deposited on SrTiO 3 .

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Section: Surface-induced Superconductivitymentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Interface superconductivity

Gariglio

Gabay

Mannhart

et al. 2015

Physica C: Superconductivity and its Applications

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“…At surfaces of insulators or semiconductors, carriers are induced near the surface by the strong electric field and trapped in the confinement potential of the electric field. In the surface metallic states by the EDLT, superconductivity is realized at low temperatures [1], as performed in SrTiO 3 [2], ZrNCl [3], KTaO 3 [4], and MoS 2 [5,6]. The surface superconductivity in SrTiO 3 was also realized at the interface of LaTiO 3 /SrTiO 3 and LaAlO 3 /SrTiO 3 [7,8].…”

Section: Introductionmentioning

confidence: 85%

“…Electric-field-induced carrier doping by the field-effecttransistor structure or the electric-double-layer-transistor (EDLT) structure [1][2][3][4][5][6] is a new powerful method to control the carrier density with the gate voltage. At surfaces of insulators or semiconductors, carriers are induced near the surface by the strong electric field and trapped in the confinement potential of the electric field.…”

Section: Introductionmentioning

confidence: 99%

Pair breaking of multigap superconductivity under parallel magnetic fields in the electric-field-induced surface metallic state

et al. 2017

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The roles of paramagnetic and diamagnetic pair-breaking effects in superconductivity in the electric-fieldinduced surface metallic state are studied using the Bogoliubov-de Gennes equation when magnetic fields are applied parallel to the surface. The multigap states of the subbands are related to the depth dependence and the magnetic field dependence of the superconductivity. In the Fermi-energy density of states and the spin density, subband contributions successively appear from higher-level subbands with increasing magnetic fields. The characteristic magnetic field dependence may be a key feature to identify the multigap structure of the surface superconductivity.

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“…Because of the strong electron-electron interactions in d-orbital derived bands of transition metal oxides, large carrier concentration changes (~10 14 cm -2 and more) can significantly change the system energy and hence the stable ground state [8,9]. A major challenge in realizing all these applications is the field-effect modulation of extreme concentrations of mobile electrons, intermediate to the concentrations in semiconductors and metals.…”

mentioning

confidence: 99%

Large electron concentration modulation using capacitance enhancement in SrTiO3/SmTiO3 Fin-field effect transistors

Verma

Nomoto

Hwang

et al. 2016

Applied Physics Letters

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Solid-state modulation of 2-dimensional electron gases (2DEGs) with extreme (~3.3x 10 14 cm -2 ) densities corresponding to 1/2 electron per interface unit cell at complex oxide heterointerfaces (such as SrTiO 3 /GdTiO 3 or SrTiO 3 /SmTiO 3 ) is challenging because it requires enormous gate capacitances. One way to achieve large gate capacitances is by geometrical capacitance enhancement in fin structures. In this work, we fabricate both Au-gated planar field effect transistors (FETs) and Fin-FETs with varying fin-widths on 60nm SrTiO 3 /5nm SmTiO 3 thin films grown by hybrid molecular beam epitaxy (hMBE). We find that the FinFETs exhibit higher gate capacitance compared to planar FETs. By scaling down the SrTiO 3 /SmTiO 3 fin widths, we demonstrate further gate capacitance enhancement, almost twice compared to the planar FETs. In the FinFETs with narrowest fin-widths, we demonstrate a record 2DEG electron concentration modulation of ~2.4 x 10 14 cm -2 .The recent discovery of extremely high electron density 2DEGs at the heterointerface of polar/nonpolar oxides such as LaAlO 3 /SrTiO 3 , GdTiO 3 /SrTiO 3 , SmTiO 3 /SrTiO 3 has opened up the area of oxide heterostructure electronics [1][2][3][4][5][6]. These 2DEG densities are of the order of ½ electron per unit cell corresponding to ~3.3 x 10 14 cm -2 , about one order higher than 2DEG densities found in traditional semiconductor heterostructures like III-Nitrides [3,7]. Because of the high electron density, these 2DEGs are interesting for realizing high power devices and tunable infrared plasmonic devices [7]. Apart from these traditional applications, large electron concentration modulation in transition metal oxides can also enable functionally different

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Discovery of superconductivity in KTaO3 by electrostatic carrier doping

Cited by 454 publications

References 25 publications

Interface superconductivity

Interface superconductivity

Pair breaking of multigap superconductivity under parallel magnetic fields in the electric-field-induced surface metallic state

Large electron concentration modulation using capacitance enhancement in SrTiO3/SmTiO3 Fin-field effect transistors

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