2020
DOI: 10.1002/aelm.202000119
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Discovery of New Polymorphs of Gallium Oxides with Particle Swarm Optimization‐Based Structure Searches

Abstract: Gallium oxide (Ga2O3) has attracted significant research interest for next‐generation high‐efficiency power devices because of its unique electronic properties such as ultra‐wide band gap, high breakdown electric field, and large Baliga’s figure of merit. Ga2O3 crystallizes in a series of reported polymorphs including β‐, α‐, ε‐, κ‐, γ‐, and δ‐Ga2O3, the structures of some of which are still in serious controversy. A polymorph structure search study of Ga2O3 is herein performed by combining particle swarm opti… Show more

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Cited by 21 publications
(10 citation statements)
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“… The Ga impregnation and subsequent removal of Zn by H 2 reduction did not change the diffraction patterns. Diffraction features corresponding to bulk GaO x and ZnO x species were not detected. , Table and Table S1 compile the physical and chemical properties of Ga/BEA-X catalysts. The properties of Ga/Zn-BEA-X catalysts are presented in Table S2.…”
Section: Resultsmentioning
confidence: 99%
“… The Ga impregnation and subsequent removal of Zn by H 2 reduction did not change the diffraction patterns. Diffraction features corresponding to bulk GaO x and ZnO x species were not detected. , Table and Table S1 compile the physical and chemical properties of Ga/BEA-X catalysts. The properties of Ga/Zn-BEA-X catalysts are presented in Table S2.…”
Section: Resultsmentioning
confidence: 99%
“…The other phases, although metastable or unstable, have been reported in literature. [80,99] The α-phase is a metastable phase with trigonal lattice which changes to the stable β-phase at temperatures above 400 °C. Other metastable phases include the ε-phase with a hexagonal crystal structure and the cubic γ-phase.…”
Section: The Functional Material-gallium Oxide: Properties For Photodetection Applicationsmentioning
confidence: 99%
“…The lattice parameters of e-Ga 2 O 3 are a = b = 2.90 Å, c = 9.26 Å, a = b = 901, g = 1201. 90,93 Note that hexagonal e-Ga 2 O 3 has a larger spontaneous polarization (P (e-Ga2O3) = 24.44 mC cm À2 ) compared with GaN. 33,94 Inspired by the previous work on the Al x Ga 1Àx N/GaN heterojunctions, high-density two-dimensional electron gas (2DEG) can be formed at the e-(Al x Ga 1Àx ) 2 O 3 /e-Ga 2 O 3 interface without any intentional doping.…”
Section: Basic Properties 1 Polymorphs Of Ga 2 Omentioning
confidence: 99%