Directly correlated microscopy of trench defects in InGaN quantum wells

O'Hanlon, Thomas J.; Massabuau, Fabien; Bao, An; Kappers, Menno J.; Oliver, Rachel

doi:10.1016/j.ultramic.2021.113255

Cited by 11 publications

(17 citation statements)

References 45 publications

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“…The BSFs of these deep trench structures originate from the underlying green MQWs, which are introduced intentionally by low-temperature growth. Massabuau et al [27,28] also reported that luminescence enhancement of MQWs inside trenches occurs only when the BSFs are formed in the early stages of QW stack growth. Thus, the dot-like emissions of red QWs originate from the regions inside those deep trench structures.…”

Section: Resultsmentioning

confidence: 99%

“…Besides, the peak wavelength of red QWs inside the trench is about 583 nm, which is redshifted by 22 nm compared to those outside trenches. This is mainly due to the enhanced In incorporation induced by the stress relaxation of deep trenches [26,28]. To precisely compare the luminescence degradation of red QWs inside and outside trenches after annealing, the spectra of 35 points in bright spots and 350 points in dark regions were selected from about 6 maps.…”

Section: Resultsmentioning

confidence: 99%

“…Notably, the stress states of QWs during growth could affect the In incorporation and crystal quality. Due to the strain relaxation caused by the encircling deep grooves, the QWs inside trenches typically have higher In contents than outside [26,28]. Nonetheless, the red MQWs inside trenches exhibit superior thermal stability despite the higher In contents.…”

Section: Resultsmentioning

confidence: 99%

“…Under strain-relaxed state, high-quality epitaxy of InGaN QWs can be achieved despite the low growth temperatures. The strain relaxation by deep trenches can also promote In incorporation and reduces polarization electric field in QWs [26,28,42]. Moreover, the V-pit loops can make the carriers localized inside trenches, thus shielding from external defects [43].…”

Section: Resultsmentioning

confidence: 99%

See 3 more Smart Citations

Thermally stable radiative recombination centers within trench structures of red multi-quantum wells

Pan,

Yang,

Chen

et al. 2024

J. Phys. D: Appl. Phys.

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High-Indium (In)-content multi-quantum wells (MQWs) are generally thermally unstable due to poor crystal quality resulting from low-temperature growth. In this study, red emission was achieved by modulating trench structures using dual-color MQW structures. Impressively, the red MQWs inside deep trenches showed excellent thermal stability despite being grown at low temperatures. After high-temperature annealing at 950 °C for 30 minutes, the photoluminescence (PL) intensity of red MQWs exhibited a significant reduction of 91.9% outside trenches, while it dropped by only 9.3% inside trenches, as confirmed by confocal PL mapping. Transmission electron microscopy results show that massive In-rich phases and stacking faults appeared in the MQWs outside trenches after annealing. By contrast, the red MQWs inside deep trenches remained intact in lattice arrangement without being significantly damaged. The superior thermal stability of red MQWs inside deep trenches was mainly attributed to the low-defect-density epitaxy of InGaN layers in strain-relaxed states.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

See 2 more Smart Citations

Thermally stable radiative recombination centers within trench structures of red multi-quantum wells

Pan,

Yang,

Chen

et al. 2024

J. Phys. D: Appl. Phys.

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“…On the one hand, In will desorb with the increase in temperature [15]; on the other hand, the increase in the pressure of 400 Torr in group D compared to the pressure of 200 Torr in group B will weaken the boundary layer of TMIn passing through the growing film transmission capacity. At lower pressures, the atomic incorporation barrier will be lowered [16], and the sample will shift from 3D to 2D step flow growth [17,18]. Therefore, the group B samples are grown at a lower growth pressure (200 Torr), which will lead to a higher In incorporation efficiency of this group of samples than that of the D group, while also having better growth quality.…”

Section: Resultsmentioning

confidence: 99%

Influence mechanism of growth temperature and pressure on surface morphology and defects of InGaN materials

Wang

et al. 2022

Mater. Res. Express

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We studied the influence of temperature and pressure on the surface morphology and V-defects of the InGaN films. It was found that an appropriate increase in the growth temperature enhanced the mobility of Ga and In atoms, smoothened the surface of the InGaN thin film samples, and improved the growth quality. Simultaneously, increasing the temperature appropriately reduced the surface roughness of the sample and the defect density of the V-defects. It is also found that under the same temperature conditions, a lower pressure weakens the incorporation barrier of atoms, enhances the incorporation efficiency of In atoms, and improves the growth quality of InGaN.

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Efficient InGaN‐Based Red Light‐Emitting Diodes by Modulating Trench Defects

Pan,

Chen,

Zhang

et al. 2024

Adv Funct Materials

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Trench defects in multi‐quantum wells (MQWs) have been considered as flawed structures that severely degraded the internal quantum efficiency (IQE) of light‐emitting diodes (LEDs) in the past. In this research, trench defects are innovatively utilized to enhance the efficiency of red InGaN LEDs. Specifically, dual‐color MQWs structures are applied to modulate trench defects. The upper red MQWs, grown on top of green MQWs with a high density of trench defects, exhibit a significant wavelength redshift of 68 nm and ≈ 6‐fold luminescence enhancement compared to those without intentionally introduced trench defects. Red InGaN LEDs with an IQE of 16.4% are achieved with this epitaxy growth strategy. Such wavelength redshift is attributed to the more indium incorporation due to the strain relaxation effect of trench defects. Moreover, the luminescence enhancement originates from the strong emission of the red MQWs inside trench defects, mainly attributed to strain relaxation and defect shielding by the wide and deep trenches. Achieving red emission by modulating trench defects is simple and reproducible without requiring additional substrate designs, which provides a novel way toward high‐efficiency red InGaN LEDs.

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Directly correlated microscopy of trench defects in InGaN quantum wells

Cited by 11 publications

References 45 publications

Thermally stable radiative recombination centers within trench structures of red multi-quantum wells

Thermally stable radiative recombination centers within trench structures of red multi-quantum wells

Influence mechanism of growth temperature and pressure on surface morphology and defects of InGaN materials

Efficient InGaN‐Based Red Light‐Emitting Diodes by Modulating Trench Defects

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