Directed Self-assembly of Topcoat-free, Integration-friendly High-^|^chi; Block Copolymers

Vora, Ankit; Chunder, Anindarupa; Tjio, Melia; Balakrishman, Srinivasan; Lofano, Elizabeth; Cheng, Joy Y.; Sanders, Daniel P.; Hirahara, Eri; Akiyama, Yukio; Polishchuk, Orest; Paunescu, Margareta; Baskaran, Durairaj; Hong, Sung-Eun; Lin, Guanyang

doi:10.2494/photopolymer.27.419

Cited by 5 publications

(4 citation statements)

References 13 publications

(13 reference statements)

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“…Three general approaches have been developed to circumvent the problem of the low surface energy block segregating to the top surface so that perpendicular, through-film domains can be achieved. One approach focuses on synthesizing block copolymers with blocks that have equal surface energy during thermal annealing. − For example, by controlled epoxidation of the polyisoprene block of polystyrene- block -polyisoprene (PS- b -PI) Kim et al . could vary the surface energy of the PI block and find an extent of epoxidation that made the surface energy difference between PS and PI negligible .…”

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confidence: 99%

Directed Self-Assembly of Triblock Copolymer on Chemical Patterns for Sub-10-nm Nanofabrication via Solvent Annealing

et al. 2016

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Directed self-assembly (DSA) of block copolymers (BCPs) is a leading strategy to pattern at sublithographic resolution in the technology roadmap for semiconductors and is the only known solution to fabricate nanoimprint templates for the production of bit pattern media. While great progress has been made to implement block copolymer lithography with features in the range of 10-20 nm, patterning solutions below 10 nm are still not mature. Many BCP systems self-assemble at this length scale, but challenges remain in simultaneously tuning the interfacial energy atop the film to control the orientation of BCP domains, designing materials, templates, and processes for ultra-high-density DSA, and establishing a robust pattern transfer strategy. Among the various solutions to achieve domains that are perpendicular to the substrate, solvent annealing is advantageous because it is a versatile method that can be applied to a diversity of materials. Here we report a DSA process based on chemical contrast templates and solvent annealing to fabricate 8 nm features on a 16 nm pitch. To make this possible, a number of innovations were brought in concert with a common platform: (1) assembling the BCP in the phase-separated, solvated state, (2) identifying a larger process window for solvated triblock vs diblock BCPs as a function of solvent volume fraction, (3) employing templates for sub-10-nm BCP systems accessible by lithography, and (4) integrating a robust pattern transfer strategy by vapor infiltration of organometallic precursors for selective metal oxide synthesis to prepare an inorganic hard mask.

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confidence: 99%

Directed Self-Assembly of Triblock Copolymer on Chemical Patterns for Sub-10-nm Nanofabrication via Solvent Annealing

et al. 2016

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“…39 Since our PS-b-PC material has a very similar molecular structure to that of the material applied in the IBM paper, a value of c of 0.19 from the IBM paper is suitable for our approximation calculation. 40 The copolymer's degree of polymerization (N) is calculated as 60 as a result. L 0 is calculated as 16.5 nm, which is very consistent with our experimental results.…”

Section: Characterization Of the New Copolymer Ps-b-pcmentioning

confidence: 99%

“…32 The F À ion which has low surface energy can effectively wet a neutral layer, form preferential adhesion on the neutral layer, and lead to a good vertical phase separation for its low surface energy. 33,34 However, due to the use of the weak F À in the BCP, the molecular weight is relatively large, resulting in the formation of a larger phase separation period. Moreover, the thermal annealing temperature applied is high and the self-assembled phase separation also requires a range of process conditions, such as a neutral layer or other surface coatings, which pose many difficulties and challenges for whole process development.…”

Section: Introductionmentioning

confidence: 99%

Study of the perpendicular self-assembly of a novel high-χ block copolymer without any neutral layer on a silicon substrate

et al. 2019

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“…Synthesized PS-b-PTMC also has a low molecular weight and high-χ. The molecule of PS-b-PTMC is about 7100 g/cm 3 and its χ value is calculated to be approximately 0.19 [22][23][24][25]. The novel block copolymer (PS-b-PTMC) used herein has many advantages, such as without the use of a neutral layer or a top coat, which is directly spin coated on a Si substrate to form a micro-phase separation structure at a suitable process condition.…”

Section: Introductionmentioning

confidence: 99%

Investigation of Micro-phase Separation of A Novel Block Copolymer Polystyrene-b-Polytrimethylene Carbonate (PS-<i>b</i>-PTMC)

Zhang

Meng

2021

J. Photopol. Sci. Technol.

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As an emerging developing technique for next-generation lithography, from self-assembly to directed self-assembly of block copolymer has attracted numerous attentions and has been a potential alternative to supplement the intrinsic limitations of conventional photolithography. In this work, a novel high-χ block copolymer Polystyrene-b-Polytrimethylene Carbonate (PS-b-PTMC) material has been successfully synthesized. It can be directly coated on Si substrates to form periodic micro-phase separation structures by annealing processes without the use of neutral layer or additional top coat. A unique selfassembly surface defect phenomenon called as black and white spots shows two different colors in SEM view. An in-depth study on the phenomenon has been carried out, including experimental characterization analysis, mechanism exploration, process optimization, etc., to find out the internal mechanism leading to the formation of such defects. It is necessary to balance both polymer/substrate and polymer/the free surface interfaces, which could induce the perpendicular orientation of microdomains. On this basis, the mechanism self-assembly defects has been proposed, and then an effective process scheme to remove the defects without affecting the formation of periodic vertical micro-phase separation patterns has also been provided, which showed a great potential of novel block copolymer under the condition of neutral layer free. We also realized the elimination of black and white spots by optimizing the process condition of BCP self-assembly and directed self-assembly (DSA). Valuable information and insights are provided for nanowire patterning in state-of-the-art semiconductor devices.

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Directed Self-assembly of Topcoat-free, Integration-friendly High-^|^chi; Block Copolymers

Cited by 5 publications

References 13 publications

Directed Self-Assembly of Triblock Copolymer on Chemical Patterns for Sub-10-nm Nanofabrication via Solvent Annealing

Directed Self-Assembly of Triblock Copolymer on Chemical Patterns for Sub-10-nm Nanofabrication via Solvent Annealing

Study of the perpendicular self-assembly of a novel high-χ block copolymer without any neutral layer on a silicon substrate

Investigation of Micro-phase Separation of A Novel Block Copolymer Polystyrene-b-Polytrimethylene Carbonate (PS-<i>b</i>-PTMC)

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