2018
DOI: 10.1038/s41928-018-0147-4
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Directed self-assembly of block copolymers for 7 nanometre FinFET technology and beyond

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Cited by 98 publications
(103 citation statements)
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“…Directed self-assembly of block copolymers (BCPs) provides a scalable route for rationally fabricating large-area patterns with dense nanoscale features at precise locations on a surface 1 4 . Directed assembly of BCP domains oriented vertically to the substrate is particularly important because vertical domains can be utilized to produce nanostructures for logic gates 5 , 6 , data storage 6 , 7 , electrical contacts 8 , optical devices 9 , sensors 10 , and separation membranes 11 , 12 , and to provide a template for materials synthesis 13 15 .…”
Section: Introductionmentioning
confidence: 99%
“…Directed self-assembly of block copolymers (BCPs) provides a scalable route for rationally fabricating large-area patterns with dense nanoscale features at precise locations on a surface 1 4 . Directed assembly of BCP domains oriented vertically to the substrate is particularly important because vertical domains can be utilized to produce nanostructures for logic gates 5 , 6 , data storage 6 , 7 , electrical contacts 8 , optical devices 9 , sensors 10 , and separation membranes 11 , 12 , and to provide a template for materials synthesis 13 15 .…”
Section: Introductionmentioning
confidence: 99%
“…Thus far, a sub‐30 nm structural pattern has been produced with photoisomerization‐driven directional mass migration of azomaterials . This resolution is comparable to that of current semiconducting technologies, such as extreme UV lithography and directed self‐assembly . Additionally, photochromic NSOM imaging can guarantee a resolution of a few nanometers, exceeding that of scattering‐based conventional NSOM .…”
Section: Discussionmentioning
confidence: 98%
“…In line-space applications lamellar BCPs have been used as mask for the definition of arrays of silicon fins that constitute the central body of non-planar fin field-effect transistors (FinFETs). Multiple works have demonstrated the capability of DSA to fabricate silicon fins [ 108 , 109 , 110 , 111 , 112 , 113 ], with probably the two most well-known being the LiNe and IBM lift-off chemoepitaxial processes. In the LiNe process a cross-linked polymer mat is deposited on the substrate and then patterned by photolithography to define the GPs.…”
Section: Block Copolymers For the Fabrication Of Functional Devicementioning
confidence: 99%