2021
DOI: 10.1016/j.vacuum.2020.109950
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Direct WS2 photodetector fabrication on a flexible substrate

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Cited by 29 publications
(11 citation statements)
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“…These results suggest that the synergistic effect between MD–WS 2 and the NUNCD substrate improves the stability of the as-fabricated MD–WS 2 /NUNCD samples. Table 1 compares similar photodetection studies of WS 2 and nanodiamond reported elsewhere 14,17–20,28,29 with the present MD–WS 2 /NUNCD photodetector.…”
Section: Resultssupporting
confidence: 67%
See 1 more Smart Citation
“…These results suggest that the synergistic effect between MD–WS 2 and the NUNCD substrate improves the stability of the as-fabricated MD–WS 2 /NUNCD samples. Table 1 compares similar photodetection studies of WS 2 and nanodiamond reported elsewhere 14,17–20,28,29 with the present MD–WS 2 /NUNCD photodetector.…”
Section: Resultssupporting
confidence: 67%
“…10,11 Although a monolayer or multilayer WS 2 -based photodetector shows good detectivity, and a broad spectral response, most of the studies have reported a low responsivity of B0.51 mA W À1 for WS 2 alone. [12][13][14] It is thus hard to balance fast response speed, high current on/off ratio and responsivity simultaneously in a pure WS 2 layer. Heterojunction devices were further explored to enhance its performance.…”
Section: Introductionmentioning
confidence: 99%
“…RF magnetron sputtering has been widely used to fabricate flexible PDs. [23][24][25] For instance, Li et al sputtered ZnO thin films and Ag electrodes on a paper substrate by RF magnetron sputtering (Fig. 1a).…”
Section: Radio Frequency (Rf) Magnetron Sputteringmentioning
confidence: 99%
“…Another solution for adjusting the bandgap of graphene is to replace or combine graphene with TMDs. 20,23,63,77 Kim et al directly deposited MoS 2 on a polydimethylsiloxane (PDMS) substrate by low-temperature sputtering and large-area photonic crystallization technology, and prepared an ultra-thin flexible PD, as shown in Fig. 4c.…”
Section: Two-dimensional (2d) Nanomaterialsmentioning
confidence: 99%
“…Specifically, the bulk WS 2 is an indirect band gap semiconductor with a band gap of 1.3 eV, while the monolayer WS 2 is a direct band gap semiconductor with a band gap of 1.98 eV . Thus, WS 2 has emerged as a promising candidate for a wide range of applications including, but not limited to, high-sensitivity photodetectors, , photonics, biology, nanomedicine, nanopatterning and nanotechnology …”
Section: Introductionmentioning
confidence: 99%