Two-dimensional
transition metal dichalcogenides (TMDCs) are widely
used in electronic and optoelectronic devices. However, the conventional
chemical vapor deposition (CVD) method is difficult to synthesize
large-area monolayer WS2 nanosheets stably, which limits
the application of WS2 in the field of photoelectric detection.
In this work, we propose an innovative NaCl-assisted CVD method that
allows freely adjustable substrate positions for synthesizing monolayer
WS2 nanosheets. The obtained maximum grain size of the
monolayer WS2 nanosheets is up to 30 μm. Subsequently,
we investigated the effect of the HfO2 passivation layer
on the performance of the metal–semiconductor–metal
(MSM) WS2-based photodetectors. The HfO2 passivation
layer brought an overall improvement to the performance of the fabricated
photodetectors, exhibiting a high responsivity of 1093.1 AW–1, a high specific detectivity of 2.6 × 1012 Jones,
and a high external quantum efficiency of 2.1 × 105%. Furthermore, the physical mechanism of the fabricated photodetectors
has been discussed to explain how the HfO2 passivation
layer takes effect in the improvement of the WS2-based
photodetectors. This result can accelerate the development of optoelectronic
devices based on TMDCs.