Direct synthesis of highly textured Ge on flexible polyimide films by metal-induced crystallization

N, Oya; Toko, Kaoru; Saitoh, Noriyuki; Yoshizawa, Noriko; Suemasu, Takashi

doi:10.1063/1.4887236

Cited by 23 publications

(19 citation statements)

References 33 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Research groups at Kyushu University and Tsukuba University have individually studied the eutectic-metal induced crystallization of Si [55], Ge [56, 57], and Si 1− x Ge x [58, 59], aiming for orientation control. From a technological point of views, Park et al [60] and Toko et al [61] individually demonstrated the sub-200 °C formation of highly (111)-oriented poly-Ge films on flexible plastic substrates. Surprisingly, the (111)Ge films grown by Au-induced crystallization have a very high hole mobility, 160 cm 2 V −1 s −1 at 300 K [62].…”

Section: Crystal Growth and Crystalline Propertiesmentioning

confidence: 99%

Growth and applications of GeSn-related group-IV semiconductor materials

Zaima

Nakatsuka

Taoka

et al. 2015

Science and Technology of Advanced Materials

169

109

View full text Add to dashboard Cite

We review the technology of Ge1−xSnx-related group-IV semiconductor materials for developing Si-based nanoelectronics. Ge1−xSnx-related materials provide novel engineering of the crystal growth, strain structure, and energy band alignment for realising various applications not only in electronics, but also in optoelectronics. We introduce our recent achievements in the crystal growth of Ge1−xSnx-related material thin films and the studies of the electronic properties of thin films, metals/Ge1−xSnx, and insulators/Ge1−xSnx interfaces. We also review recent studies related to the crystal growth, energy band engineering, and device applications of Ge1−xSnx-related materials, as well as the reported performances of electronic devices using Ge1−xSnx related materials.

show abstract

Section: Crystal Growth and Crystalline Propertiesmentioning

confidence: 99%

Growth and applications of GeSn-related group-IV semiconductor materials

Zaima

Nakatsuka

Taoka

et al. 2015

Science and Technology of Advanced Materials

169

109

View full text Add to dashboard Cite

show abstract

“…Highly (111)-oriented Ge layers have been recently achieved on glass [18][19][20][21][22][23][24] and plastic substrates [25][26][27] owing to the development of metal-induced layer exchange (MILE), that is, crystallization via the layer exchange between a-Ge and metals. The MILE is a powerful technique to fabricate high-speed thin-film transistors [28] or vertically aligned nanowires [29,30] on amorphous substrates including plastics.…”

Section: Introductionmentioning

confidence: 99%

Effects of Al grain size on metal-induced layer exchange growth of amorphous Ge thin film on glass substrate

2017

View full text Add to dashboard Cite

Metal-induced layer exchange (MILE) has attracted increasing attention as a way to lower the crystallization temperature of amorphous semiconductor thin films on insulating substrates. This paper demonstrates that the quality of the catalytic Al layer strongly influences the growth properties in the MILE of amorphous Ge. The growth velocity of the MILE significantly decreases with increasing the deposition temperature of Al (TAl: RT-200 °C), while the grain size of crystallized Ge becomes maximum (28 μm) at TAl = 100 °C. This behavior is attributed to the Al grain size depending on TAl, which influences both the nucleation frequency and the lateral growth velocity of Ge in Al. These findings give new insight into MILE for fabricating high-quality semiconductor thin films at low temperatures on inexpensive substrates.

show abstract

“…20,26) In addition, these catalysts have significantly lowered the growth temperature of a-Ge, leading to the formation of poly-Ge on plastic substrates. 22,25,26) The use of poly-Ge as a seed layer has enabled us to directly synthesize vertically aligned Ge nanowires on glass 28) and plastic substrates. 29) However, in an Al-Ge system, the resulting Ge layer shows a high hole concentration of p = 2 × 10 20 cm -3 owing to the residual Al atoms in Ge activated as acceptors.…”

Section: Introductionmentioning

confidence: 99%

Effect of interlayer on silver-induced layer exchange crystallization of amorphous germanium thin film on insulator

Yoshimine¹,

Toko²,

Suemasu³

2017

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

Metal-induced layer exchange (MILE) is an advanced crystallization technique for fabricating high-quality semiconductor thin films on insulating substrates at low temperatures. Here, we focused on Ag as a catalytic metal for crystallizing amorphous germanium thin films on glass through MILE. The layer exchange between Ag and aGe was not simple because Ag diffused into aGe so fast that it crystallized the top aGe layer before the completion of layer exchange. To suppress Ag diffusion into aGe , we explored the kind of interlayer material between them as well as the growth temperature. Preparing SiO2 and GeO2 interlayers allowed for a complete layer exchange, resulting in the formation of polycrystalline Ge thin films on glass at temperatures as low as 250 °C. These findings are essential for further understanding and controlling the layer exchange phenomenon.

show abstract

Direct synthesis of highly textured Ge on flexible polyimide films by metal-induced crystallization

Cited by 23 publications

References 33 publications

Growth and applications of GeSn-related group-IV semiconductor materials

Growth and applications of GeSn-related group-IV semiconductor materials

Effects of Al grain size on metal-induced layer exchange growth of amorphous Ge thin film on glass substrate

Effect of interlayer on silver-induced layer exchange crystallization of amorphous germanium thin film on insulator

Contact Info

Product

Resources

About