Direct Resist Removal Process from Copper-Exposed Vias for Low-Parasitic-Capacitance Interconnects

Effects of pH variation in aqueous solutions on dissolution of copper oxide

“…The component ratios of binding energy of copper metal/oxide were calculated from the curve fitting of the Cu 2p region. The surface of the untreated electroplated copper was composed of CuO and Cu(OH) 2 , wherein Cu 2+ species can be identified from the binding energies of Cu 2p at 933.4 and 935.5 eV, corresponding to CuO and Cu(OH) 2 . [16] Due to surface treatment with the citric …”

“…[1] In the process of damascene integration, post-etch residues (PER) related to copper process should be completely removed to prevent various potential problems such as device unreliability and degradation. [2] Cleaning chemicals need to exhibit a high degree of selectivity in removing copper oxide from the underlying copper and on dielectric sidewalls. Unfortunately, copper does not form a stable surface oxide layer.…”

Characterization and integration of new porous low-k dielectric (k<2.3) for 65 nm technology and beyond

“…N 2 /H 2 RIE ashing process can effectively remove resist with little carbon depletion in porous low-k film. Generally, the carbon in porous low-k film can be easily removed by in O 2 based ashing process [13]. The carbon depletion layer was decreased after photo resist (PR) strip in N 2 /H 2 chemistry compare to O 2 chemistry as shown in Fig.…”

Dissolution of copper oxide by the ethanolamine and ammonium fluoride in aqueous solution

“…In order to create vias and trenches, damascene structures should be formed through the dielectric plasma etching processes. These processes typically leave post‐etch residue (PER) with the copper oxides on the sidewall and underlying copper layer 2, 3. To remove the copper oxides after copper interconnection processes, cleaning solutions are usually adopted to treat the contaminated surface.…”