Direct printing of soluble acene crystal stripes by a programmed dip-coating process for organic field-effect transistor applications

Nam, Sooji; Jeong, Yong Jin; Jung, Jaemin; Kim, Se Hyun; Ahn, Jinho; Shin, Kwonwoo; Jang, Jaeyoung

doi:10.1039/c7tc04118g

Cited by 23 publications

(15 citation statements)

References 53 publications

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“…Purification of the compounds was done with column chromatography using a 100−200 mesh silica gel. 1 H and 13 C nuclear magnetic resonance (NMR) spectra were recorded on a Bruker 400 MHz spectrometer in CDCl 3 . Chemical shifts were reported against TMS.…”

Section: ■ Conclusionmentioning

confidence: 99%

“…1 (dd, J = 6.7, 5.3 Hz, 5H), 8.05 (d, J = 8.9 Hz, 2H), 7.84 (d, J = 8.8 Hz, 2H), 7.22 (dd, J = 11.9, 4.6 Hz, 6H), 4.08 (s, 6H). 13 General Reaction Procedure for Sonagashira Cross-Coupling Reaction. Compounds 2, PdCl 2 (PPh 3 ) 2 , and CuI were dissolved in a 1:1 mixture of anhydrous triethylamine (TEA) and tetrahydrofuran (THF).…”

Section: ■ Conclusionmentioning

confidence: 99%

“…1 H NMR (400 MHz, CDCl 3 ): δ (ppm) 8.97 (s, 1H), 8.44 (s, 1H), 8.20 (dd, J = 14.0, 8.2 Hz, 3H), 7.87 (d, J = 8.7 Hz, 1H), 7.69−7.35 (m, 8H), 4.10 (s, 3H). 13 C NMR (100 MHz, CDCl…”

Section: ■ Conclusionmentioning

confidence: 99%

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Ester-Flanked π-Extended Quinolines for Solution-Processable Ambipolar Organic Field-Effect Transistors

Anjali

Dheepika

Imran

et al. 2020

ACS Appl. Electron. Mater.

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A series of π-extended quinolines with D−π–A–D and D−π–A–A architectures were designed and synthesized via the Sonagashira cross-coupling reaction to serve as ambipolar organic semiconductors for use in C–FET. Ambipolar mobilities were observed for methoxy- and tert-butyl group-substituted compounds. Among the molecules studied, π-extended methyl 2-(4-methoxyphenyl)-6-((4-methoxyphenyl)ethynyl)quinoline-4-carboxylate with D−π–A–D architecture exhibited high ambipolar transistor characteristics with hole and electron mobilities of 0.10 and 0.05 cm2/V s, respectively. The good charge carrier mobilities are supported by an electron-donating methoxy group with high highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) levels, extensive π-conjugation, and better self-assembly. Organic field-effect transistor (OFET) devices were fabricated using the spin-coating technique with BGTC configuration. By employing the postannealing technique, self-assembled crystalline films were obtained as depicted by scanning electron microscopy (SEM). These compounds can find potential applications in organic light-emitting transistors, sensors, and logic circuits.

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Section: ■ Conclusionmentioning

confidence: 99%

Section: ■ Conclusionmentioning

confidence: 99%

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Ester-Flanked π-Extended Quinolines for Solution-Processable Ambipolar Organic Field-Effect Transistors

Anjali

Dheepika

Imran

et al. 2020

ACS Appl. Electron. Mater.

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“…In recent years, many studies have focused on the formation of highly ordered and well-aligned active layers by different process engineering, and there are two main schemes that have been developed for solution processed of OTFTs [ 15 ]. One is solution permeation by pre-designed templates in the coating process, such as zone casting, rotation coating, dip coating, blade coating, brush coating, and meniscus-guided coating, and the related reported processes and references are shown in Table 2 [ 16 , 17 , 18 , 19 , 20 , 21 ]. The other is pre-patterning separated wetting and dewetting regions prior to the annealing process.…”

Section: Introductionmentioning

confidence: 99%

Effect of Vertical Annealing on the Nitrogen Dioxide Response of Organic Thin Film Transistors

et al. 2018

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Nitrogen dioxide (NO2) sensors based on organic thin-film transistors (OTFTs) were fabricated by conventional annealing (horizontal) and vertical annealing processes of organic semiconductor (OSC) films. The NO2 responsivity of OTFTs to 15 ppm of NO2 is 1408% under conditions of vertical annealing and only 72% when conventional annealing is applied. Moreover, gas sensors obtained by vertical annealing achieve a high sensing performance of 589% already at 1 ppm of NO2, while showing a preferential response to NO2 compared with SO2, NH3, CO, and H2S. To analyze the mechanism of performance improvement of OTFT gas sensors, the morphologies of 6,13-bis(triisopropylsilylethynyl)-pentacene (TIPS-pentacene) films were characterized by atomic force microscopy (AFM) in tapping mode. The results show that, in well-aligned TIPS-pentacene films, a large number of effective grain boundaries inside the conducting channel contribute to the enhancement of NO2 gas sensing performance.

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“…Several types of conceptual optical devices have been proposed to enhance detection performance, namely, optical microcavities, [18] waveguides, [19] or nanostructures with resonant geometries, [20] but their realization depends on precise and controllable fabrication and integration of electronics and photonics preferentially with scalable producibility. Attempts to develop methods of controlled nucleation and growth of single crystal selectively distributed have led to innovative solution processing techniques such as programmed dip-coating, [21] meniscus-driven, [22] spray printing, [23] or vapor jet printing. [24] Yet, these approaches still present semiconductor layers with many domain boundaries, low-performance reliability, and little edge control.…”

mentioning

confidence: 99%

Organic Single Crystal Patterning Method for Micrometric Photosensors

Serra

Sequeira

Domingos

et al. 2021

Adv Funct Materials

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Light detection technologies are of interest due to their applications in energy conversion and optical communications. Single-crystal organic semiconductors, such as rubrene, present high detectivities and charge carrier mobility, making them attractive for light-sensing applications. Growth of high crystallinity organic crystals is achieved using vapor processes, forming crystals of arbitrary shapes and orientations and requiring posterior patterning processes. However, patterning the organic semiconductors using industrystandard microfabrication techniques is not straightforward, as these often cause irreversible damage to the crystals. Here the fabrication of patterned micrometric rubrene photosensors is demonstrated through a combination of photolithography and Reactive Ion Etching steps. Protective layers during microfabrication minimize degradation of optoelectronic properties of the organic single crystals during fabrication. Crystals undergoing the patterning process presented a survival rate of 39%. Photoresponse values of up to 41 mA W −1 are obtained under illumination at 500 nm. This opens a route for the industrial-scale fabrication process of high-performance optoelectronic devices based on organic crystals semiconductors.

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Direct printing of soluble acene crystal stripes by a programmed dip-coating process for organic field-effect transistor applications

Abstract: High-crystalline TIPS-PEN crystal stripes are directly printed with controllable inter-stripe spacingviaprogrammed dip-coating for application in organic field-effect transistors.

Cited by 23 publications

References 53 publications

Ester-Flanked π-Extended Quinolines for Solution-Processable Ambipolar Organic Field-Effect Transistors

Ester-Flanked π-Extended Quinolines for Solution-Processable Ambipolar Organic Field-Effect Transistors

Effect of Vertical Annealing on the Nitrogen Dioxide Response of Organic Thin Film Transistors

Organic Single Crystal Patterning Method for Micrometric Photosensors

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