Direct power injection (DPI) simulation framework and postprocessing

Lavarda, Andrea; Deutschmann, Bernd

doi:10.1109/isemc.2015.7256349

Cited by 6 publications

(4 citation statements)

References 1 publication

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“…The parametrized characteristics of the generator are the incident power (P dpi ) , frequency of the input signal (F dpi ) and the delay before the start of the immunity test. For each circuit simulation, the delay is taken as half of the period of the output signal to give it time to settle [8].…”

Section: A Dpi Circuit and Test Setup Descriptionmentioning

confidence: 99%

A Comparison Among DPI Immunities of Multi-Stage CSVCOs and Ring Oscillators

Khan

Ramezani

Koohestani

et al. 2022

2021 13th International Workshop on the Electromagnetic Compatibility of Integrated Circuits (EMC Compo)

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This paper evaluates & compares, through electrical simulation, the immunity of multi-stage current starved voltage controlled oscillators (CSVCOs) and ring oscillators (ROs) submitted to direct power injection (DPI). All circuits were designed and simulated in the 180 nm 5 V XFAB-SOI process, with matching dimensions. The failure criteria selected were the output frequency, peak-to-peak voltage and DC offset voltage. Results demonstrated, that CSVCOs were sucsceptible at lower DPI frequencies, while the ROs were susceptible at higher frequencies. Both were impacted by different failure criterions. Regardless of the oscillator category, a higher number of inverter stages resulted in lower susceptibility to incident power levels. As a consequence of increasing the power level of RF injections, the highest DC supply current and output power, monitored for each oscillator was close to their nominal output frequencies. These circuits are currently being fabricated in a test chip and immunity measurements will be performed on it.

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Section: A Dpi Circuit and Test Setup Descriptionmentioning

confidence: 99%

A Comparison Among DPI Immunities of Multi-Stage CSVCOs and Ring Oscillators

Khan

Ramezani

Koohestani

et al. 2022

2021 13th International Workshop on the Electromagnetic Compatibility of Integrated Circuits (EMC Compo)

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“…In [7] all circuits are designed to have an attenuation of about 40 dB at a frequency of 1 MHz, which is the lower frequency corner for performing direct power injection (DPI) tests [10]. However, for this exemplary analysis the frequency responses are slightly modified to demonstrate the qualitative estimations obtained from EMI frequency propagation analysis.…”

Section: Fig 2 Output Current Deviation From the Op For Current Mirrors A To F For Same Emi Input Current (Amplitude 5µa Emi Frequency 1mmentioning

confidence: 99%

Comparison of EMI effects on different current mirror structures using a post-processing framework

Zupan

Deutschmann

2020

Elektrotech. Inftech.

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In this paper the use of a simulation framework for comparing the effects of electromagnetic interference (EMI) on different current mirror structures is demonstrated. This is done with the help of an existing tool that is extended by specific, newly developed Python® scripts. The Cadence Design System and Spectre are used as simulation environment. The resulting outputs obtained by DC and transient simulations serve as an input for the next post-processing steps. The investigated current mirror topologies are well-described in literature and are already analyzed with respect to their EMI robustness. This paper focuses on simplifying the comparison of these structures and reducing the need of mathematical derivations. The script results are displayed directly in the schematic by using a heatmap and annotations for voltage nodes and current terminals. Mainly, two analyses are performed, whereas one part deals with EMI-induced DC offset shifts and the other part deals with the propagation of disturbance frequencies to the output current. Finally, the analytic results are compared with the graphical ones in order to check the feasibility of using the presented framework and the newly developed scripts and procedures.

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“…Based on the guidelines provided in IEC 62132-4 [2], ICs are currently verified using direct power injection (DPI) of conducted single-tone radio frequency (RF) disturbances into the IC pins [3]. At each frequency, forward power is incrementally raised until reaching the lower of the immunity requirement or the level at which the circuit fails due to loss of its functionality and/or degradation of performance to intolerable levels [4].…”

Section: Introductionmentioning

confidence: 99%

Synergistic Effect of Multitone EMI on the Conducted Immunity of Integrated Oscillators

Khan

Devaraj

Koohestani

et al. 2022

IEEE Lett. on Electromagn. Compat. Pract. and Appl.

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The performance of two oscillator circuits, namely a current-starved voltage controlled oscillator and a ring oscillator, is compared with respect to multi-tone direct power injection (DPI). The objective is to investigate the impact of causal dependence between multi-tones on the immunity levels of integrated blocks with different architectures but similar functionality. The multi-tone immunity analysis performed using the probabilistic noisy-OR model reveals an increase in the probability of failure due to electromagnetic interference relatively to single-tone EM disturbance. The proportions of inhibition and positive causality, as well as the mean degree of synergy (DoS) caused by multi-tone EM disturbances, are extensively compared for both oscillator circuits.

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Direct power injection (DPI) simulation framework and postprocessing

Cited by 6 publications

References 1 publication

A Comparison Among DPI Immunities of Multi-Stage CSVCOs and Ring Oscillators

A Comparison Among DPI Immunities of Multi-Stage CSVCOs and Ring Oscillators

Comparison of EMI effects on different current mirror structures using a post-processing framework

Synergistic Effect of Multitone EMI on the Conducted Immunity of Integrated Oscillators

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