Direct observation of an incommensurate solid-solid interface

Lu, Toh‐Ming; Bai, P.; Yapsir, A. S.; Chang, Po Hsiang; Shaffner, Thomas J.

doi:10.1103/physrevb.39.9584

Cited by 23 publications

(5 citation statements)

References 13 publications

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“…Interestingly, from the high-resolution TEM cross-section image shown by Lu, et. al. [4], the ideal 4:3 match was not observed.…”

Section: Introductioncontrasting

confidence: 50%

See 1 more Smart Citation

Microstructure of Epitaxial Al(111)/Si(111) Films Studied by Synchrotron Grazing Incidence X-Ray Diffraction

Hung¹,

Liang²,

H³

et al. 1990

MRS Proc.

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We report the results of our x-ray diffraction studies on epitaxial Al(lll)/Si(lll) films prepared by the partially ionized beam deposition technique. Significant changes were observed in intensity profiles for samples before and after annealing. In the in-plane radial scan of Al(220) peak, the shift of Bragg peak is shown due to misfit strain. A weak satellite is also observed which indicates a semicoherent interfacial structure of the annealed film with misfit dislocations. A possible picture of misfit-induced incommensurate structure of Al films is discussed.

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“…Interestingly, from the high-resolution TEM cross-section image shown by Lu, et. al. [4], the ideal 4:3 match was not observed.…”

Section: Introductioncontrasting

confidence: 50%

“…Indeed, such dislocations are also revealed by close examination of the TEM picture shown in Ref. 4.…”

Section: Discussionnmentioning

confidence: 86%

Microstructure of Epitaxial Al(111)/Si(111) Films Studied by Synchrotron Grazing Incidence X-Ray Diffraction

Hung¹,

Liang²,

H³

et al. 1990

MRS Proc.

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“…Examples of such growth include parallel epitaxy of Cu(001) onto NaCl(001) [26] and Al(111) onto Si(111) [27]. For a parallel epitaxy of CaF 2 on Ni(001) substrate, i.e.…”

Section: Epitaxy Of Ge On Caf 2 /Nimentioning

confidence: 99%

Low temperature epitaxial growth of Ge on CaF2 buffered cube-textured Ni

Gaire

Palazzo

Bhat

et al. 2012

Journal of Crystal Growth

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“…The resulted Gaussian plus Lorentzian profile is a direct indication of the loss of the Goldstone mode in the adlayer as the result of dislocation pinning. Al films were grown on Si(lll) substrates by using the partially-ionized-beam deposition technique [11] and characterized by high-resolution TEM [il] and GIXS [10]. The film depositions were carried out with substrate at room temperature.…”

Section: Submonolayers Of Pb On Cu (110)mentioning

confidence: 99%