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Lü, Wei; Mu, Yunsong; Liu, Xiao Qiang; Chen, X. S.; Wan, Mingfang; Shi, Guo Liang; Qiao, Yi; Shen, S. C.; Fu, Ying; Willander, Magnus

doi:10.1103/physrevb.57.9787

Cited by 32 publications

(9 citation statements)

References 13 publications

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“…(2) The barrier height and the QW width are such that only one bound state of energy E 1 is present in the well. Although the excited state above the barrier is observed to be quasi-confined (Lu et al 1998), we approximate the states above the barrier to be continuum.…”

Section: Theory Calculationmentioning

confidence: 99%

Detectivity simulation of long-wavelength quantum well infrared photodetectors

et al. 2011

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We present the results of a model for the detectivity simulation of multi-period AlGaAs/GaAs Long-wavelength quantum well infrared photodetectors (LW-QWIPs) by assuming a three-dimensional carrier transport in the barriers where the electrical fields are obtained in a self-consistent way. This model takes into account the fundamental mechanisms involved in the device detection process. The electrical field distribution, currents and detectivities are carefully calculated and analyzed. The numerical results explain well our experimental observations.

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Section: Theory Calculationmentioning

confidence: 99%

Detectivity simulation of long-wavelength quantum well infrared photodetectors

et al. 2011

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“…Under proper light illumination, electrons generated by inter-subband transition in the isolated upper QW will tunnel out of the QW and migrate to the lower 2DEG [1]. Several experiments have been conducted to demonstrate CSIPs' single photon detection capability [2][3][4], but theoretical simulations of these devices on the microscopic scale are inadequate.…”

Section: Introductionmentioning

confidence: 98%

Simulation on a charge sensitive infrared phototransistor for 45μm wavelength

Ding

Guo

2013

2013 13th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)

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Charge sensitive infrared phototransistors (CSIP) are well known for their capability for response spectrum tuning and single photon detection. In this paper, we established a physical model for a charge sensitive infrared phototransistor operating at 45μm wavelength using the Crosslight Apsys software. Several key physical mechanisms involved such as inter-subband optical transition and resonant tunneling of carriers were applied and fine tuned to obtain a better simulation result.

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“…The square quantum wells are designed in such a way that the energy separation between the first excited state and ground state matches with the energy of the infrared photons detected [5][6]. The excited state above the barrier is considered as a discrete state as approved by experiment [7]. The molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD) techniques can achieve high uniformity of semiconductor parameters across the entire GaAs/AlGaAs QWIP wafers, and allow for large QWIPs FPAs with low spatial (fixed) pattern noise, low cost, thermal stability, using standard manufacturing techniques based on mature GaAs processing technologies.…”

Section: Introductionmentioning

confidence: 99%