Simulation on a charge sensitive infrared phototransistor for 45μm wavelength

Abstract

Charge sensitive infrared phototransistors (CSIP) are well known for their capability for response spectrum tuning and single photon detection. In this paper, we established a physical model for a charge sensitive infrared phototransistor operating at 45μm wavelength using the Crosslight Apsys software. Several key physical mechanisms involved such as inter-subband optical transition and resonant tunneling of carriers were applied and fine tuned to obtain a better simulation result.