Direct Observation and Mechanism for Enhanced Electron Emission in Hydrogen Plasma-Treated Diamond Nanowire Films

Panda, Kalpataru; Sankaran, Kamatchi Jothiramalingam; Panigrahi, B. K.; Tai, Nyan‐Hwa; Lin, I‐Nan

doi:10.1021/am501398s

Cited by 36 publications

(23 citation statements)

References 62 publications

(77 reference statements)

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“…7,8 Over past few years, many other nanomaterials, such as aligned carbon nanotubes, 10 ultra-nanocrystalline diamond lms, [11][12][13] arrays of gallium nitride nanorods, 14 titanium dioxide nanotubes, 15 cone-shaped zinc oxide nanostructures, 16 tin oxide nanotubes 17 and needle-shaped molybdenum trioxide 18 are showing much more e±ciency in¯eld emission with very low turn-on¯eld. Moreover ion implantation, 19 metallic coating 20 and H 2 surface treatment on diamond lms 21 are observed to signi¯cantly enhance the electron¯eld emission (EFE) properties. However, the lack of cost-e®ectiveness, ease in processing, highly packed emitting surfaces and compatible in fabrication limit the materials for applications in emitting device technologies.…”

Section: Introductionmentioning

confidence: 99%

“…However, the lack of cost-e®ectiveness, ease in processing, highly packed emitting surfaces and compatible in fabrication limit the materials for applications in emitting device technologies. In spite of high turn-on¯eld of bare SiNWs, availability of wide spectrum of synthesis procedure, [17][18][19][20][21][22] comparatively more dense emitting tips and above all compatibility in semiconducting vacuum microelectronic systems 8,28 make SiNWs°exible in electronics and optoelectronics device fabrication. The¯eld emission properties of SiNWs such as turn-on¯eld, emitting current density per unit area and¯eld enhancement factor can be signi¯cantly improved by functionalized coating of ultra-nanocrystalline diamond, 13,29 carbon nanotubes, 30 and various metallic thin¯lms 31 have been reported.…”

Section: Introductionmentioning

confidence: 99%

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Morphological Dependence of Field Emission Properties of Silicon Nanowire Arrays

Sahoo¹,

Marikani²

2016

NANO

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The electron¯eld emission (EFE) properties of vertically aligned arrays of silicon nanowires (SiNWs) grown from silicon substrate at di®erent gold sputtering periods of 0 s, 8 s, 15 s and 25 s at a rate of 10 nm/min by electroless metal deposition process were investigated. It has been observed that the transformation of silicon tips from irregular to highly dense and uniform cylindrical morphological nanostructures with an increase in Au sputtering periods. A signi¯cant enhancement in EFE properties of as-prepared arrays of SiNWs with the increase in Au sputtering periods is observed. The threshold¯elds for attaining current density of 0.1 mA cm À2 were decreased gradually as 32.38 Vm À1 , 29.37 Vm À1 and 23.19 Vm À1 for the arrays of SiNWs synthesized from Si substrate by Au coating of 8 s, 15 s and 25 s respectively. Moreover, from Fowler-Nordheim plot, the turn-on¯eld is observed to decrease from 16.56 V=m for as-prepared to 8.77 V=m for 25 s Au sputtered SiNW arrays. The e®ective work functions of the electron emitting array of SiNWs have been improved from 0.5 meV to 0.1 meV.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Morphological Dependence of Field Emission Properties of Silicon Nanowire Arrays

Sahoo¹,

Marikani²

2016

NANO

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“…Recently, Panda et al 99 produced diamond nanowires by Hplasma etching of nitrogen-containing diamond films generated by a MW-CVD process. The H-plasma treatments produced wire-like diamond nanocrystals encased in a nanographitic sheet (Fig.…”

Section: D Structuresmentioning

confidence: 99%

Nanodiamonds for field emission: state of the art

Terranova

Orlanducci

Rossi³

et al. 2015

Nanoscale

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The aim of this review is to highlight the recent advances and the main remaining challenges related to the issue of electron field emission (FE) from nanodiamonds. The roadmap for FE vacuum microelectronic devices envisages that nanodiamonds could become very important in a short time. The intrinsic properties of the nanodiamond materials indeed meet many of the requirements of cutting-edge technologies and further benefits can be obtained by tailored improvements of processing methodologies. The current strategies used to modulate the morphological and structural features of diamond to produce highly performing emitting systems are reported and discussed. The focus is on the current understanding of the FE process from nanodiamond-based materials and on the major concepts used to improve their performance. A short survey of non-conventional microsized cold cathodes based on nanodiamonds is also reported. IntroductionMiniaturized electron sources based on the field emission (FE) process, namely "cold-cathodes", are nowadays replacing the conventional thermoionic electron sources. FE-based devices are able to operate at high frequency and at high current densities, have no need of heating and are characterized by reduced weight and by instantaneous switching on. Moreover, Maria Letizia TerranovaProfessor of Chemistry at Tor Vergata University of Rome (Italy), Maria Letizia Terranova heads the Minima lab at the Department of Chemical Science and Technology. She has expertise on different scientific topics, including nuclear chemistry, laser-induced reactions in the gas-phase, ion-and laserinduced modifications in solids, electrochemical and vapour deposition processes. Her research activity is mainly focused on the synthesis, processing and functional testing of nanomaterials: carbon nanostructures (nanodiamonds, nanotubes, graphenes, onions), nanocomposites and hybrid organic/ inorganic structures. Materials and systems are produced for applications in micro/nano-electronics, optoelectronics, energetics, sensing, thermal management and bio-related nanotechnologies. She has co-authored 290 papers, 4 patents, and co-edited 4 books. Silvia OrlanducciIn 2004 Fowler-Nordheim and the experiments by Spindt and coworkers 3 paved the way for a number of subsequent researches on FE-based vacuum electronics. The good performance of such devices is based on the fact that, according to the Fowler-Nordheim law, the emitted current density J depends strongly on the local applied electric field E and that geometric factors typical of nanostructures (sharp edges, tips, peaks, nanoprotrusions) locally increase the concentration of electric field at the emitter sites. The ratio of the local field to the applied field, the so-called electric field enhancement factor β, 1 independently of the material, is a key factor influencing the field emission characteristics. In the last two decades the design, realization and application of a new generation of cold cathodes based on advanced nanomaterials have been the object of tremendous i...

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“…However, the disadvantages of hydrogen plasma treatment are also obvious. It can cause remarkable etching of sp 2 ‐bonded carbon and the deposition of a non‐diamond hydrocarbon layer on the surface during the cooling‐down process . To overcome the above drawbacks, Suffredini et al reported that H‐termination of of boron‐doped diamond (BDD) films could be easily achieved by electrochemical pretreatment.…”

Section: Introductionmentioning

confidence: 99%

Electrochemical cathodic treatment: A non-destructive way to hydrogenate conductive ultrananocrystalline diamond films

Xiong

Wang

Dai

et al. 2014

Phys. Status Solidi A

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The excellent conductivity of nitrogen-doped ultrananocrystalline diamond (UNCD) films mainly originates from sp 2 -bonded carbon located in the grain boundaries. But conventional hydrogen plasma treatment to achieve surface hydrogenation would preferentially etch sp 2 -bonded carbon and deteriorate the conductivity. In this article, an electrochemical cathodic treatment (ECT) was developed as an alternative method to hydrogenate the surface of nitrogen-doped conductive UNCD films. The treatment was done in acidic solution at À30 V for 10 min. X-ray photoelectron spectroscopy revealed that, after the ECT, the photoelectron subpeaks related to carbon-oxygen bonding significantly decreased and there was no obvious variation in the content of sp 2 -bonded carbon. Compared to pristine UNCD (P-UNCD) films, the hydrogenated UNCD (H-UNCD) films exhibited a marked change in electrochemical responses such as cyclic voltammetry, capacitance-voltage and electrochemical impedance spectroscopy, suggesting the different surface termination between two UNCD films. More importantly, Raman spectra, scanning electron microscopy and Hall-effect measurement, revealed that no obvious variations in atomic bonds and surface morphology as well as electrical properties existed before and after the ECT. All of these results demonstrated that ECT can be a non-destructive surface hydrogenation method for nitrogen-doped conductive UNCD films with a high content of sp 2 -bonded carbon atoms.

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Direct Observation and Mechanism for Enhanced Electron Emission in Hydrogen Plasma-Treated Diamond Nanowire Films

Cited by 36 publications

References 62 publications

Morphological Dependence of Field Emission Properties of Silicon Nanowire Arrays

Morphological Dependence of Field Emission Properties of Silicon Nanowire Arrays

Nanodiamonds for field emission: state of the art

Electrochemical cathodic treatment: A non-destructive way to hydrogenate conductive ultrananocrystalline diamond films

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