Direct non-destructive total reflection X-ray fluorescence elemental determinations in zirconium alloy samples

Abstract

The development of a direct non-destructive synchrotron-radiation-based total reflection X-ray fluorescence (TXRF) analytical methodology for elemental determinations in zirconium alloy samples is reported for the first time. Discs, of diameter 30 mm and about 1.6 mm thickness, of the zirconium alloys Zr-2.5%Nb and Zircalloy-4 were cut from plates of these alloys and mirror polished. These specimens were presented for TXRF measurements directly after polishing and cleaning. The TXRF measurements were made at the XRF beamline at Elettra synchrotron light source, Trieste, Italy, at two different excitation energies, 1.9 keV and 14 keV, for the determinations of low- and high-Z elements, respectively. The developed analytical methodology involves two complementary quantification schemes, i.e. using either the fundamental parameter method or relative sensitivity based method, allowing quantification of fifteen minor and trace elements with respect to Zr with very good precision and accuracy. In order to countercheck the TXRF analytical results, some samples were analyzed using the DC arc carrier distillation atomic emission spectrometry technique also, which shows an excellent agreement with the results of the TXRF-based methodology developed in this work. The present work resulted in a non-destructive TXRF elemental characterization methodology of metal and alloy samples avoiding the cumbersome dissolution and matrix separation which are normally required in other techniques and traditional methods of TXRF determination. In addition, the production of analytical waste could also be avoided to a large extent. Although the work was carried out for specific applications in the nuclear industry, it is equally suitable for other such samples in different industrial applications.

Nondestructive discrimination of red silk single fibers using total reflection X‐ray fluorescence spectrometry and synchrotron radiation X‐ray fluorescence spectrometry

“…It is extensively used for the surface contamination analysis of semiconductor Si wafers [23,24]. TXRF has been used to trace elemental analysis of small samples performed in laboratories [25][26][27]. For instance, Prange et al analyzed single fibers using TXRF [28].…”