Direct measurements of the energy flux due to chemical reactions at the surface of a silicon sample interacting with a SF6 plasma

Dussart, Rémi; Thomann, Anne-Lise; Pichon, Laurianne; Bedra, Larbi; Semmar, Nadjib; Lefaucheux, Philippe; Mathias, Jacky; Tessier, Yves

doi:10.1063/1.2995988

Cited by 23 publications

(20 citation statements)

References 21 publications

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“…The reaction enthalpy was estimated by using the expression (13). We found a rather good agreement between our evaluation (−2200 kJ.mol -1 ) and the theoretic value (-1931 kJ.mol -1 ) [26].…”

Section: Energy Flux In a Sf 6 Plasma Interacting With Siliconsupporting

confidence: 64%

“…A measurement of the energy transfer due to these reactions was carried out by placing a silicon sample on the HFM and by submitting it to a SF 6 inductively coupled plasma (figure 12) [26] . figure 13(a), we show the results we have obtained by alternating Ar plasmas and SF 6 plasmas when a silicon sample was mounted on the HFM.…”

Section: Energy Flux In a Sf 6 Plasma Interacting With Siliconmentioning

confidence: 99%

See 1 more Smart Citation

A Heat Flux Microsensor for Direct Measurements in Plasma Surface Interactions

Dussart¹,

Thomann²,

Nadjib³

2011

Microsensors

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Section: Energy Flux In a Sf 6 Plasma Interacting With Siliconsupporting

confidence: 64%

Section: Energy Flux In a Sf 6 Plasma Interacting With Siliconmentioning

confidence: 99%

A Heat Flux Microsensor for Direct Measurements in Plasma Surface Interactions

Dussart¹,

Thomann²,

Nadjib³

2011

Microsensors

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“…Energy flux to a substrate was measured by many researchers using variety of thermal probes (TPs) in the past in the RF plasma [32][33][34][35][36][37], RF magnetron plasma [38,39], and DC grow discharge plasma [40].…”

Section: Measurement Of Spatial Distribution Of Heat Flux To the Subsmentioning

confidence: 99%

Deposition of Aluminum-Doped ZnO Films by ICP-Assisted Sputtering

Matsuda

Hirashima

Mine

et al. 2013

ZnO Nanocrystals and Allied Materials

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Inductively coupled plasma (ICP) assisted DC sputter-deposition was used for the deposition of Al-doped ZnO (AZO or ZnO:Al) thin films. With increasing ICP RF power, film properties including deposition rate, crystallinity, transparency and resistivity were improved. To understand the plasma-surface interaction, several plasma diagnostics were performed. Heat fluxes to the substrate were measured by thermal probes, number densities of sputtered metallic atom species were measured by absorption spectroscopy using hollow cathode lamps (HCL) and light emitting diodes (LEDs), and neutral gas temperatures were measured by external cavity diode laser (ECDL) absorption spectroscopy. As a result, it was revealed that the high density ICP heated the substrate through a high heat flux to the substrate, resulting in a high quality film deposition without the need for intentional substrate heating.The heat flux to the substrate was predominantly contributed by the plasma charged species, not by the neutral Ar atoms which were also significantly heated in the ICP. The substrate position where the highest quality films were obtained was found to coincide with the position where the substrate heat flux took the maximum value.

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“…Previous works have shown the great interest of performing energy flux measurements with the HFM to study such mechanisms. For example, it has been possible to detect the energy transferred to the surface by a chemical reaction (silicon etching) or by the condensation of atoms (plasma sputtering deposition) [15,17].…”

Section: Introductionmentioning

confidence: 99%

“…[12,14] Another way to determine the energy transfer between plasma and surface is the use of a sensor which is sensitive to the energy flux itself. The Heat Flux Microsensor (HFM) which was firstly explored for plasma diagnostics at GREMI exactly uses this principle [15,16]. The microsensor is composed of a Pt100 temperature sensor and a thermopile.…”

Section: Introductionmentioning

confidence: 99%

On the measurement of energy fluxes in plasmas using a calorimetric probe and a thermopile sensor

Cormier¹,

Stahl²,

Thomann³

et al. 2010

J. Phys. D: Appl. Phys.

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Two different diagnostics for the determination of the energy influx in plasma processes were used to characterize an ion beam source and an asymmetric RF discharge. The related energy fluxes were measured in dependence on the ion energy and on the RF power, respectively. The first sensor, called HFM (Heat Flux Microsensor) is a thermopile which allows for direct energy flux measurements. With the second sensor, a calorimetric probe, the energy influx has been calculated from the temporal temperature evolution preliminary registered. Although the working principle of both sensors is different, the obtained results are in good agreement. In the ion beam ( < 1,5keV)) rather high energy influxes are achieved (up to 700mW/cm²), whereas the values measured in the asymmetric RF discharge were lower than 50mW/cm² for discharge powers in the range of 10 to 100 W. The performances and limitations of both sensors are compared and discussed.

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Direct measurements of the energy flux due to chemical reactions at the surface of a silicon sample interacting with a SF6 plasma

Cited by 23 publications

References 21 publications

A Heat Flux Microsensor for Direct Measurements in Plasma Surface Interactions

A Heat Flux Microsensor for Direct Measurements in Plasma Surface Interactions

Deposition of Aluminum-Doped ZnO Films by ICP-Assisted Sputtering

On the measurement of energy fluxes in plasmas using a calorimetric probe and a thermopile sensor

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