Direct Measurement of the Growth Mode of Graphene on SiC(0001) and<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>SiC</mml:mi><mml:mo stretchy="false">(</mml:mo><mml:mn>000</mml:mn><mml:mover accent="true"><mml:mn>1</mml:mn><mml:mo>¯</mml:mo></mml:mover><mml:mo stretchy="false">)</mml:mo></mml:math>

Hannon, James B.; Copel, M.; Tromp, R. M.

doi:10.1103/physrevlett.107.166101

Cited by 46 publications

(32 citation statements)

References 16 publications

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“…Older graphene sheets are lift up by the formation of the new graphene sheet, and the oldest graphene sheet remains on the topmost. This mechanism is consistent with the experimental observations [75,76]. The experiment further revealed that this mechanism is also applicable to the C-face as well as the Si-face [76].…”

Section: Discussion On Quasi-stable Buffer Layer Structuresupporting

confidence: 80%

Theoretical Study of Graphene on SiC(11-20) a-Face

Kageshima

Hibino

2016

e-J. Surf. Sci. Nanotech.

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Atomic structures and electronic states of epitaxial graphene on the SiC(1120) a-face are studied based on the first-principles calculation. It is found that the surface can have two types of the surface, the stable quasi-freestanding structure and the quasi-stable buffer layer structure. The neutral nature, the low interface state density, and the absence of large interface dipoles suggest that the epitaxial graphene on the SiC(1120) a-face is appropriate for studying the physical properties of carrier transport. It is also proposed that the existence of the buffer layer is directly related with the epitaxial relation of the formed graphene with the SiC substrate.

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Section: Discussion On Quasi-stable Buffer Layer Structuresupporting

confidence: 80%

Theoretical Study of Graphene on SiC(11-20) a-Face

Kageshima

Hibino

2016

e-J. Surf. Sci. Nanotech.

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“…Because of this strong coupling with the substrate, a buffer layer does not show graphene-like π bands and is electronically inactive [97]. After formation of the buffer layer, further heating leads to decomposition of the SiC bilayers underneath the buffer layer, resulting in nucleation of a new carbon layer (left inset in Figure 15) [98]. It is believed that: (i) the 6 ?…”

Section: Growth Of Graphene On Si Facementioning

confidence: 99%

“…3 layer acts as a template layer for graphene on the Si face, ensuring well-ordered graphene on that surface [99], and (ii) by further Si sublimation, a second 6 ? 3 reconstructed surface forms under the first one which decouples from the substrate and forms monolayer graphene [98].…”

Section: Growth Of Graphene On Si Facementioning

confidence: 99%

Epitaxial Graphene on SiC: A Review of Growth and Characterization

2016

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This review is devoted to one of the most promising two-dimensional (2D) materials, graphene. Graphene can be prepared by different methods and the one discussed here is fabricated by the thermal decomposition of SiC. The aim of the paper is to overview the fabrication aspects, growth mechanisms, and structural and electronic properties of graphene on SiC and the means of their assessment. Starting from historical aspects, it is shown that the most optimal conditions resulting in a large area of one ML graphene comprise high temperature and argon ambience, which allow better controllability and reproducibility of the graphene quality. Elemental intercalation as a means to overcome the problem of substrate influence on graphene carrier mobility has been described. The most common characterization techniques used are low-energy electron microscopy (LEEM), angle-resolved photoelectron spectroscopy (ARPES), Raman spectroscopy, atomic force microscopy (AFM) in different modes, Hall measurements, etc. The main results point to the applicability of graphene on SiC in quantum metrology, and the understanding of new physics and growth phenomena of 2D materials and devices.

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“…In the case of epitaxial graphene films on the Si-face of SiC substrates, a carbon-rich buffer layer with partial sp 3 hybridization is always formed [46]. As mentioned above, the buffer layer substantially affects the electronic properties of graphene and causes pinning of the Fermi level and the subsequent reduction of the Schottky barrier height ( Figure 5).…”

Section: Figurementioning

confidence: 99%

Role of the Potential Barrier in the Electrical Performance of the Graphene/SiC Interface

et al. 2017

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Abstract:In spite of the great expectations for epitaxial graphene (EG) on silicon carbide (SiC) to be used as a next-generation high-performance component in high-power nano-and micro-electronics, there are still many technological challenges and fundamental problems that hinder the full potential of EG/SiC structures and that must be overcome. Among the existing problems, the quality of the graphene/SiC interface is one of the most critical factors that determines the electroactive behavior of this heterostructure. This paper reviews the relevant studies on the carrier transport through the graphene/SiC, discusses qualitatively the possibility of controllable tuning the potential barrier height at the heterointerface and analyses how the buffer layer formation affects the electronic properties of the combined EG/SiC system. The correlation between the sp 2 /sp 3 hybridization ratio at the interface and the barrier height is discussed. We expect that the barrier height modulation will allow realizing a monolithic electronic platform comprising different graphene interfaces including ohmic contact, Schottky contact, gate dielectric, the electrically-active counterpart in p-n junctions and quantum wells.

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Direct Measurement of the Growth Mode of Graphene on SiC(0001) andSiC(0001¯)

Cited by 46 publications

References 16 publications

Theoretical Study of Graphene on SiC(11-20) a-Face

Theoretical Study of Graphene on SiC(11-20) a-Face

Epitaxial Graphene on SiC: A Review of Growth and Characterization

Role of the Potential Barrier in the Electrical Performance of the Graphene/SiC Interface

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