Direct measurement of quantum-state dispersion in an accumulation layer at a semiconductor surface

Aristov, V. Yu.; Lay, G. Le; Zhilin, V. M.; Indlekofer, G.; Grupp, C.; Taleb‐Ibrahimi, A.; Soukiassian, P.

doi:10.1103/physrevb.60.7752

Cited by 36 publications

(33 citation statements)

References 11 publications

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“…Betti et al investigated the modification of surface electron accumulation at InAs surface, and have shown that an accumulation layer forms after a small amount of K adsorption; however it decreases again with further K adsorption. Similar results were also reported for other alkali metals on III-V semiconductor surfaces [32][33][34]. At low K coverages, electron transfer from potassium to underlying indium atoms forms K-In interface dipole and surface band bending becomes more pronounced.…”

Section: Resultssupporting

confidence: 82%

Potassium and ion beam induced electron accumulation in InN

et al. 2015

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a b s t r a c t "We present angle resolved photoemission study of quantized electron accumulation subbands obtained from both clean and potassium deposited InN(0001) surfaces. Shifting of the quantized accumulation states toward higher binding energies upon low energy N 2 + ion bombardment or a small amount of potassium adsorption is explained by the modification of the In-adlayer induced surface states. N 2 + ion bombardment leads to a higher density of donor-type surface states by creating nitrogen vacancies near the surface. On the other hand, a small amount of K adsorbates initially donate their free electron to InN and result in more pronounced downward band bending. Eventually, further K adsorption leads to passivation of surface states and reduction of the surface electron accumulation. With the increase of the electron density, enhanced many-body interactions of electrons within the electron accumulation layer are observed."

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Section: Resultssupporting

confidence: 82%

Potassium and ion beam induced electron accumulation in InN

et al. 2015

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“…In both cases the wavevector component parallel to the surface, k , is small. In close analogy with angle resolved photoemission spectroscopy experiments, 27 only a narrow range of energies is available for tunneling into the 2D subband E 0 (see Fig. 4).…”

Section: Discussionmentioning

confidence: 96%

Low-Temperature Scanning Tunneling Microscopy of Ring-Like Surface Electronic Structures Around Co Islands on InAs(110) Surfaces

Muzychenko¹,

Schouteden²,

Savinov³

et al. 2009

j nanosci nanotechnol

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We report on the experimental observation by scanning tunneling microscopy at low temperature of ring-like features that appear around Co metal islands deposited on a clean (110) oriented surface of cleaved p-type InAs crystals. These features are visible in spectroscopic images within a certain range of negative tunneling bias voltages due to the presence of a negative differential conductance in the current-voltage dependence. A theoretical model is introduced, which takes into account non-equilibrium effects in the small tunneling junction area. In the framework of this model the appearance of the ring-like features is explained in terms of interference effects between electrons tunneling directly and indirectly (via a Co island) between the tip and the InAs surface.

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“…The peak develops right at the bottom of the conduction band and is similar to what has been observed by other authors in different systems. 2,[13][14][15] The peak is smaller than in the spectra published in Ref. 15, since here we show angleintegrated data and the peak is localized in one specific area of reciprocal space.…”

mentioning

confidence: 55%

“…This had been seen before for Cs adsorption on InAs͑110͒ by Aristov and co-workers. 2,13 Håkansson and Johansson 14 deposited K on the As-terminated Si͑111͒-(1ϫ1) surface and found a K-induced surface state located at the Fermi level. In momentum space this peak is found in a pocket around the M point of the surface Brillouin zone.…”

Section: Introductionmentioning

confidence: 99%

Influence of bulk doping type on the Li adsorption site on Si(111)-(1×1):H

et al. 2004

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The model surface Si͑111͒-(1ϫ1):H is used as a substrate for the adsorption of submonolayer amounts of Li. For n-doped substrates a peak right at the conduction band minimum is found in photoemission spectra. The peak is absent if the experiment is conducted on p-type substrates. Density functional theory calculations for different adsorption sites correlate this peak in the conduction band with Li adsorption in a H3 site of the Si͑111͒-(1ϫ1):H surface. Experiment and theory show that the binding energy of the spectral feature is independent of the Li coverage. The absence of the structure for p-type substrates suggests a doping dependence of the adsorption site for Li on Si͑111͒-(1ϫ1):H.

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Direct measurement of quantum-state dispersion in an accumulation layer at a semiconductor surface

Cited by 36 publications

References 11 publications

Potassium and ion beam induced electron accumulation in InN

Potassium and ion beam induced electron accumulation in InN

Low-Temperature Scanning Tunneling Microscopy of Ring-Like Surface Electronic Structures Around Co Islands on InAs(110) Surfaces

Influence of bulk doping type on the Li adsorption site on Si(111)-(1×1):H

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