2004
DOI: 10.1103/physrevb.69.035310
|View full text |Cite
|
Sign up to set email alerts
|

Influence of bulk doping type on the Li adsorption site on Si(111)-(1×1):H

Abstract: The model surface Si͑111͒-(1ϫ1):H is used as a substrate for the adsorption of submonolayer amounts of Li. For n-doped substrates a peak right at the conduction band minimum is found in photoemission spectra. The peak is absent if the experiment is conducted on p-type substrates. Density functional theory calculations for different adsorption sites correlate this peak in the conduction band with Li adsorption in a H3 site of the Si͑111͒-(1ϫ1):H surface. Experiment and theory show that the binding energy of the… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1

Citation Types

0
2
0

Year Published

2004
2004
2009
2009

Publication Types

Select...
4

Relationship

0
4

Authors

Journals

citations
Cited by 4 publications
(2 citation statements)
references
References 23 publications
0
2
0
Order By: Relevance
“…The role of the type of dopant on molecular reactions on silicon surfaces has been rarely investigated. The influence of the type of dopant has been previously observed at the macroscopic scale in silicon etching, during H atom photodesorption processes from the Si(100)-2×1:H surface, or in the adsorption of Li atoms on the Si(111):H surface . Here, we investigate, at the level of a single molecule, the influence of the type of dopant on the molecular surface reactions induced by electronic excitation with the STM.…”
Section: Stm Manipulations Of Stilbene Moleculesmentioning
confidence: 95%
See 1 more Smart Citation
“…The role of the type of dopant on molecular reactions on silicon surfaces has been rarely investigated. The influence of the type of dopant has been previously observed at the macroscopic scale in silicon etching, during H atom photodesorption processes from the Si(100)-2×1:H surface, or in the adsorption of Li atoms on the Si(111):H surface . Here, we investigate, at the level of a single molecule, the influence of the type of dopant on the molecular surface reactions induced by electronic excitation with the STM.…”
Section: Stm Manipulations Of Stilbene Moleculesmentioning
confidence: 95%
“…The influence of the type of dopant has been previously observed at the macroscopic scale in silicon etching, 50 during H atom photodesorption processes from the Si(100)-2×1:H surface, 51 or in the adsorption of Li atoms on the Si(111):H surface. 52 Here, we investigate, at the level of a single molecule, the influence of the type of dopant on the molecular surface reactions induced by electronic excitation with the STM. Recent work has revealed the role of the type of dopant (n or p) in Si(100) on the surface dynamics of chemisorbed biphenyl molecules for which the quantum yields remain the same.…”
Section: The Role Of the Type Of Dopant In Silicon On Thementioning
confidence: 99%