1998
DOI: 10.1063/1.368601
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Direct measurement of product of the electron mobility and mean free drift time of CdZnTe semiconductors using position sensitive single polarity charge sensing detectors

Abstract: This article describes novel techniques to directly measure the electron mobility and mean free drift time product e e in semiconductor detectors. These methods are based on newly developed single polarity charge sensing and depth sensing techniques. Compared with conventional methods based on the Hecht relation, the new methods do not involve curve fitting, are less sensitive to the variation of pulse rise times, and allow the use of higher energy ␥ rays typical of many applications.

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Cited by 75 publications
(41 citation statements)
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“…The systematic error on m e t e related to ballistic deficit effects was estimated by subsequently removing the lowest voltage from the fit and resulted in 10% for DET5 and 5% for DET2, respectively. Note, a more accurate method to determine m e t e that requires the measurement of the depth-of-interaction is described in He et al [14].…”
Section: Discussionmentioning
confidence: 98%
“…The systematic error on m e t e related to ballistic deficit effects was estimated by subsequently removing the lowest voltage from the fit and resulted in 10% for DET5 and 5% for DET2, respectively. Note, a more accurate method to determine m e t e that requires the measurement of the depth-of-interaction is described in He et al [14].…”
Section: Discussionmentioning
confidence: 98%
“…The mobility-lifetime product for electrons was experimentally measured using the method described in [9]. By varying detector bias, the amount of electron trapped in the detector varies due to the difference in electron drifting time.…”
Section: B Electron Mobility and Lifetime Measurementsmentioning
confidence: 99%
“…The measurement of electron mobility of the material will give the researcher some basic information and idea on the penetrations of the electron via material [32][33][34]. The higher value of the electron mobility indicates that the material absorb the electron less than small value of electron mobility.…”
Section: Electron Mobility Measurement Setupmentioning
confidence: 99%