2008
DOI: 10.1063/1.2844855
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Direct integration of vertical In2O3 nanowire arrays, nanosheet chains, and photoinduced reversible switching of wettability

Abstract: GaN nanowire and Ga 2 O 3 nanowire and nanoribbon growth from ion implanted iron catalystPhase separations of single-crystal nanowires grown by self-catalytic chemical vapor deposition method

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Cited by 14 publications
(19 citation statements)
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“…Similar results were also obtained for many binary oxide nanowires, including In 2 O 3 , SnO 2 , ZnO, and so on. [49][50][51][52][53][54][55] The photoinduced wettability conversion of the as-synthesized zigzag Zn 2 SnO 4 nanowires was also studied. Fig.…”
Section: Resultsmentioning
confidence: 99%
“…Similar results were also obtained for many binary oxide nanowires, including In 2 O 3 , SnO 2 , ZnO, and so on. [49][50][51][52][53][54][55] The photoinduced wettability conversion of the as-synthesized zigzag Zn 2 SnO 4 nanowires was also studied. Fig.…”
Section: Resultsmentioning
confidence: 99%
“…We suggest that the growth of IONTs in porous InP is based on the vapor-solid model which may involve the following processes. As we know that phosphorus vapor and metal indium vapor were formed by the decomposition of porous InP when the annealing temperature is up to 450 • C [15]:…”
Section: Resultsmentioning
confidence: 99%
“…41 However, it was found that the Pt and Pd nanoparticles tended to aggregate significantly if the UV irradiation was not applied before the decorating processes. The oxygen vacancies generated under the UV irradiation are beneficial for sticking hydroxyl groups (-OH) onto the surface of the In 2 O 3 supports, 42,43 and thus probably lead to uniform adsorption of the Pt and Pd complexes.…”
Section: Resultsmentioning
confidence: 99%