Direct high-resolution determination of vacancy-type defect profiles in ion-implanted silicon

Coleman, P. G.; Mason, R.E.; Dyken, M Van; Knights, Andrew P.

doi:10.1088/0953-8984/17/22/021

Cited by 6 publications

(6 citation statements)

References 19 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Positron annihilation is a powerful technique for evaluating vacancy-type defects in semiconductors. 11) Defects introduced into Si by conventional ion implantation have been investigated using this method, [11][12][13][14][15][16][17][18] and the results show that positrons are a powerful probe for studying point defects in the subsurface region of Si. In the present study, we have used a monoenergetic positron beam to probe vacancy-type defects in Si doped with B by plasma doping.…”

Section: Introductionmentioning

confidence: 99%

Vacancy-Boron Complexes in Plasma Immersion Ion-Implanted Si Probed by a Monoenergetic Positron Beam

Uedono

Tsutsui

Ishibashi

et al. 2010

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

Vacancy-type defects in plasma immersion B-implanted Si were probed by a monoenergetic positron beam. Doppler broadening spectra of the annihilation radiation were measured and compared with spectra calculated using the projector augmented-wave method. For the as-doped sample, the vacancy-rich region was found to be localized at a depth of 0–10 nm, and the major defect species were determined to be divacancy–B complexes. After spike rapid thermal annealing at 1075 °C, the lineshape parameter S of Doppler broadening spectra corresponding to the high-B-concentration region (4–30 nm) was found to be smaller than the characteristic S value obtained for defect-free Si. From a detailed analysis of the Doppler broadening spectra, the origin of the decrease in the S value was attributed to the trapping of positrons by negatively charged B clusters such as icosahedral B12.

show abstract

Section: Introductionmentioning

confidence: 99%

Vacancy-Boron Complexes in Plasma Immersion Ion-Implanted Si Probed by a Monoenergetic Positron Beam

Uedono

Tsutsui

Ishibashi

et al. 2010

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

show abstract

“…In both cases an estimate of the absolute divacancy distributions for each implant has been arrived at by (a) assuming that the final and initial vacancy depth profiles are similar, the latter being given by SRIM, and (b) by fixing the concentrations at half ion range to be those given by the formula developed by Coleman et al [13], which accounts for post-implantation defect recombination. Assumption (a) was shown to be reasonable by high-resolution VEPAS vacancy depth profiling measurements [14]. A similar procedure was followed to simulate the vacancy damage created by the lower-dose implants, and the result was so similar in depth dependence to figure 1 that it is not shown here.…”

Section: Methodsmentioning

confidence: 80%

Vacancy-type defects created by single-shot and chain ion implantation of silicon

et al. 2012

Self Cite

View full text Add to dashboard Cite

Abstract. Vacancy-type defects created by single-energy implantation of Czochralski-grown single-crystal silicon by 4 MeV silicon ions at doses of 10 12 and 10 13 cm −2 have been compared with those created by an energy chain of implants of 0.4, 0.9, 1.5, 2.2 and 4 MeV ions, each at one-fifth of the singleenergy dose. Measurements were taken for as-implanted samples and after annealing to temperatures up to 600• C. In contrast to the expectation that a more uniform depth distribution of interstitials and vacancies would lead to a more efficient recombination and consequently fewer surviving vacancies, vacancyrelated damage survived in the chain-implanted samples to higher temperatures, before almost complete annealing at 600• C. It is therefore concluded that it is the absolute initial monovacancy concentration, rather than any initial separation of vacancy-and interstitial-rich regions, that determines the probability of survival as divacancies, and that there exists a threshold divacancy concentration of 1-2 × 10 18 cm −3 for clustering at 400-500

show abstract

“…If we assume saturation trapping in V 2 -like defects, an estimate of the defect concentration C (cm −3 ) in sample P L U in the first 200 nm below the surface can only be found using the following expression involving the effective diffusion length L eff [19]:…”

Section: Un-annealed Samplesmentioning

confidence: 99%

Positron annihilation studies of fluorine-vacancy complexes in phosphorus- and fluorine-implanted germanium

Edwardson¹,

Coleman²,

Mubarek³

2014

Semicond. Sci. Technol.

Self Cite

View full text Add to dashboard Cite

The formation of F n V 2 complexes, with n = 5 ± 1, near the end-of-range damage region in germanium implanted with 30 keV phosphorus and 40 keV fluorine ions, after annealing to 400 • C, has been observed using variable-energy positron annihilation spectroscopy in conjunction with secondary ion mass spectrometry. Phosphorus ions were implanted at 6 × 10 13 and 10 15 , F at 10 15 cm −2 . Complexes-at lower concentrations-have also been observed at shallower depths in samples implanted with P at 10 15 cm −2 . The complexes break up and their components diffuse away at 450 and 500 • C for the higher and lower P dose samples, respectively.

show abstract

Direct high-resolution determination of vacancy-type defect profiles in ion-implanted silicon

Cited by 6 publications

References 19 publications

Vacancy-Boron Complexes in Plasma Immersion Ion-Implanted Si Probed by a Monoenergetic Positron Beam

Vacancy-Boron Complexes in Plasma Immersion Ion-Implanted Si Probed by a Monoenergetic Positron Beam

Vacancy-type defects created by single-shot and chain ion implantation of silicon

Positron annihilation studies of fluorine-vacancy complexes in phosphorus- and fluorine-implanted germanium

Contact Info

Product

Resources

About