2014
DOI: 10.1002/smll.201402427
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Direct Growth of Ultrafast Transparent Single-Layer Graphene Defoggers

Abstract: The idea flat surface, superb thermal conductivity and excellent optical transmittance of single-layer graphene promise tremendous potential for graphene as a material for transparent defoggers. However, the resistance of defoggers made from conventional transferred graphene increases sharply once both sides of the film are covered by water molecules which, in turn, leads to a temperature drop that is inefficient for fog removal. Here, the direct growth of large-area and continuous graphene films on quartz is … Show more

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Cited by 96 publications
(75 citation statements)
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“…The previously mentioned advantages make graphene a promising alternative for next generation exible heaters. However, most of the graphene-based heaters suffer from large sheet resistance 2,16 and require a high input voltage when a high temperature is needed. For wearable devices, such a high voltage poses a potential danger to the human body.…”
mentioning
confidence: 99%
“…The previously mentioned advantages make graphene a promising alternative for next generation exible heaters. However, most of the graphene-based heaters suffer from large sheet resistance 2,16 and require a high input voltage when a high temperature is needed. For wearable devices, such a high voltage poses a potential danger to the human body.…”
mentioning
confidence: 99%
“…[1][2][3][4] The most promising technique for large area graphene growth over Si is by chemical vapor deposition (CVD). [5][6][7][8][9] Another key area in which there is great importance between Si and graphene is the use of Si nanoparticles (NPs) and graphene as anode material in Li ion batteries. [10][11][12][13][14][15] In both the above cases, graphene can be added or incorporated to the Si, however, the direct fabrication of graphene on to an Si structure is usually preferable since it minimizes processing and hence cost.…”
Section: As a Mild Oxidant In The Reaction The Graphene Layers Form mentioning
confidence: 99%
“…Liu et al deposited CH 4 with oxygen‐assisted to synthesis high‐quality polycrystalline graphene on SiO 2 substrates 29. In the meantime, we first presented an approach of Ga vapor‐assisted CVD to direct graphitization of carbon fragments on quartz surfaces 36. By the means of this method, we first designed the defogger based on a continuous, low‐defect and large‐area monolayer graphene film (Figure 3e).…”
Section: Properties and Preparationmentioning
confidence: 99%