Direct growth of 
<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mi>MoS</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:math>
 on electrolytic substrate and realization of high-mobility transistors

Alam, Md. Hasibul; Chowdhury, Sayema; Roy, Anupam; Braga, Maria Helena; Banerjee, Sanjay K.; Akinwande, Deji

doi:10.1103/physrevmaterials.5.054003

Cited by 12 publications

(5 citation statements)

References 54 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…5(g) compares the mobility of our device with n-type MoS 2 FETs reported previously. 28,33–56 It is worth noting that the local 1T structural phase transition is an effective approach for coordinately improving both the intrinsic transport and contact properties to achieve high-speed and low-power MoS 2 FETs.…”

Section: Resultsmentioning

confidence: 99%

Improving electron mobility in MoS₂ field-effect transistors by optimizing the interface contact and enhancing the channel conductance through local structural phase transition

Cheng,

He,

Han

et al. 2024

J. Mater. Chem. C

View full text Add to dashboard Cite

show abstract

Section: Resultsmentioning

confidence: 99%

Improving electron mobility in MoS₂ field-effect transistors by optimizing the interface contact and enhancing the channel conductance through local structural phase transition

Cheng,

He,

Han

et al. 2024

J. Mater. Chem. C

View full text Add to dashboard Cite

show abstract

“…For example, molybdenum disulfide (MoS 2 ) [ 13 , 14 , 15 ], the most frequently investigated TMD material, has a thickness of only 6.5 Å as a monolayer. In addition to this atomically thin structural benefit, TMDs can potentially offer high carrier mobility [ 16 , 17 ], sharp subthreshold switching swings [ 18 , 19 ], and mechanical stress endurance [ 20 , 21 , 22 ], so they have rapidly emerged as the core of next-generation electronic devices.…”

Section: Introductionmentioning

confidence: 99%

Combination of Polymer Gate Dielectric and Two-Dimensional Semiconductor for Emerging Field-Effect Transistors

Choi

Yoo

2023

Polymers

View full text Add to dashboard Cite

Two-dimensional (2D) materials are considered attractive semiconducting layers for emerging field-effect transistors owing to their unique electronic and optoelectronic properties. Polymers have been utilized in combination with 2D semiconductors as gate dielectric layers in field-effect transistors (FETs). Despite their distinctive advantages, the applicability of polymer gate dielectric materials for 2D semiconductor FETs has rarely been discussed in a comprehensive manner. Therefore, this paper reviews recent progress relating to 2D semiconductor FETs based on a wide range of polymeric gate dielectric materials, including (1) solution-based polymer dielectrics, (2) vacuum-deposited polymer dielectrics, (3) ferroelectric polymers, and (4) ion gels. Exploiting appropriate materials and corresponding processes, polymer gate dielectrics have enhanced the performance of 2D semiconductor FETs and enabled the development of versatile device structures in energy-efficient ways. Furthermore, FET-based functional electronic devices, such as flash memory devices, photodetectors, ferroelectric memory devices, and flexible electronics, are highlighted in this review. This paper also outlines challenges and opportunities in order to help develop high-performance FETs based on 2D semiconductors and polymer gate dielectrics and realize their practical applications.

show abstract

“…Another key advantage of liquids over solid dielectrics is the nature of the electrical characteristics, which is independent of their physical thickness [29]. Despite the advantages, implementing liquid dielectrics in practical applications still has to overcome challenges related to instability due to the liquid nature, sensitivity to humidity and measurements at cryogenic temperature [30].…”

Section: Introductionmentioning

confidence: 99%

Improving the optoelectronic properties of monolayer MoS₂ field effect transistor through dielectric engineering

Vrinda Narayanan,

Majumder,

Gokul

et al. 2023

Nanotechnology

View full text Add to dashboard Cite

The reduced dielectric screening in atomically thin two-dimensional materials makes them very sensitive to the surrounding environment, which can be modulated to tune their optoelectronic properties. In this study, we significantly improved the optoelectronic properties of monolayer MoS2 by varying the surrounding environment using different liquid dielectrics, each with a specific dielectric constant ranging from 1.89 to 18. Liquid mediums offer the possibility of environment tunability on the same device. For a back-gated field effect transistor, the field effect mobility exhibited more than two-order enhancement when exposed to a high dielectric constant medium. Further investigation into the effect of the dielectric environment on the optoelectronic properties demonstrated a variation in photoresponse relaxation time with the dielectric medium. The rise and decay times were observed to increase and decrease, respectively, with an increase in the dielectric constant of the medium. These results can be attributed to the dielectric screening provided by the surrounding medium, which strongly modifies the charged impurity scattering, the band gap, and defect levels of monolayer MoS2. These findings have important implications for the design of biological and chemical sensors, particularly those operating in a liquid environment. By leveraging the tunability of the dielectric medium, we can optimize the performance of such sensors and enhance their detection capabilities.

show abstract

Direct growth of MoS2 on electrolytic substrate and realization of high-mobility transistors

Cited by 12 publications

References 54 publications

Improving electron mobility in MoS₂ field-effect transistors by optimizing the interface contact and enhancing the channel conductance through local structural phase transition

Improving electron mobility in MoS₂ field-effect transistors by optimizing the interface contact and enhancing the channel conductance through local structural phase transition

Combination of Polymer Gate Dielectric and Two-Dimensional Semiconductor for Emerging Field-Effect Transistors

Improving the optoelectronic properties of monolayer MoS₂ field effect transistor through dielectric engineering

Contact Info

Product

Resources

About

Direct growth of MoS2 on electrolytic substrate and realization of high-mobility transistors

Cited by 12 publications

References 54 publications

Improving electron mobility in MoS2 field-effect transistors by optimizing the interface contact and enhancing the channel conductance through local structural phase transition

Improving electron mobility in MoS2 field-effect transistors by optimizing the interface contact and enhancing the channel conductance through local structural phase transition

Combination of Polymer Gate Dielectric and Two-Dimensional Semiconductor for Emerging Field-Effect Transistors

Improving the optoelectronic properties of monolayer MoS2 field effect transistor through dielectric engineering

Contact Info

Product

Resources

About

Improving electron mobility in MoS₂ field-effect transistors by optimizing the interface contact and enhancing the channel conductance through local structural phase transition

Improving electron mobility in MoS₂ field-effect transistors by optimizing the interface contact and enhancing the channel conductance through local structural phase transition

Improving the optoelectronic properties of monolayer MoS₂ field effect transistor through dielectric engineering