Direct growth of GaAs-based structures on exactly (001)-oriented Ge/Si virtual substrates: reduction of the structural defect density and observation of electroluminescence at room temperature under CW electrical injection

Chriqui, Y.; Largeau, L.; Patriarche, G.; Saint-Girons, Guillaume; Bouchoule, S.; Sagnes, I.; Bensahel, D.; Campidelli, Y.; Kermarrec, O.

doi:10.1016/j.jcrysgro.2004.01.038

Cited by 33 publications

(15 citation statements)

References 13 publications

(15 reference statements)

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“…No other growth conditions were changed. The through-thickness APB density for each sample was analyzed using a similar method to that presented by Georgakilas et al [17] [13,17,20,23] and can therefore improve contrast in imaging and differentiate APBs from other features. Images of the sample surfaces in various areas were taken in plan view with a FEI Nova NanoSEM 430 scanning electron microscope (SEM) operating at 5 kV.…”

Section: Methodsmentioning

confidence: 99%

Effect of bulk growth temperature on antiphase domain boundary annihilation rate in MOCVD-grown GaAs on Si(001)

Barrett

Martin

Bao

et al. 2016

Journal of Crystal Growth

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Section: Methodsmentioning

confidence: 99%

Effect of bulk growth temperature on antiphase domain boundary annihilation rate in MOCVD-grown GaAs on Si(001)

Barrett

Martin

Bao

et al. 2016

Journal of Crystal Growth

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“…This solution has been demonstrated to selectively etch APBs versus other defects in epitaxial GaAs layers grown on Si (14)(15)(16). After staining the samples, a scanning electron microscope (SEM) was used to take images of the sample surfaces in various areas.…”

Section: Methodsmentioning

confidence: 99%

The Effect of Interfacial Contamination on Antiphase Domain Boundary Formation in GaAs on Si(100)

et al. 2015

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The suppression of defects such as antiphase domain boundaries (APBs) is a key challenge in the effort to integrate III-V compound semiconductor devices on Si. The formation of APBs naturally arises from growing a polar material on a nonpolar substrate. Surface contamination present on the substrate prior to growth can also disrupt the ordering of atoms in an epitaxial layer and lead to extended defects. In this study, the amount of contamination on Si(100) wafers was varied by approximately an order of magnitude to investigate the effect on formation of APBs in an epitaxial GaAs film grown by MOCVD. The results indicate a direct correlation between the interfacial oxygen and carbon impurity dose and the APB density.

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“…Its high carrier mobility and active optical properties have made germanium (Ge) be considered as a promising material for semiconductor devices. There are a number of fledgling technologies being developed that require the epitaxial growth of Ge films on crystalline silicon (c-Si) substrates, such as Ge on Si photodetectors for near infrared (1.3-1.55 m) sensing [8][9][10], Ge lasers [11], and monolithic integration of III-V compound semiconductor devices on c-Si 2 International Journal of Photoenergy [12][13][14][15]. However, the difficulty of growing epitaxial Ge on a Si substrate lies in the 4.2% lattice mismatch between Ge and Si.…”

Section: Introductionmentioning

confidence: 99%

Low Temperature (180°C) Growth of Smooth Surface Germanium Epilayers on Silicon Substrates Using Electron Cyclotron Resonance Chemical Vapor Deposition

Chang

Chu

et al. 2014

International Journal of Photoenergy

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This paper describes a new method to grow thin germanium (Ge) epilayers (40 nm) on c-Si substrates at a low growth temperature of 180°C using electron cyclotron resonance chemical vapor deposition (ECR-CVD) process. The full width at half maximum (FWHM) of the Ge (004) in X-ray diffraction pattern and the compressive stain in a Ge epilayer of 683 arcsec and 0.12% can be achieved. Moreover, the Ge/Si interface is observed by transmission electron microscopy to demonstrate the epitaxial growth of Ge on Si and the surface roughness is 0.342 nm. The thin-thickness and smooth surface of Ge epilayer grown on Si in this study is suitable to be a virtual substrate for developing the low cost and high efficiency III-V/Si tandem solar cells in our opinion. Furthermore, the low temperature process can not only decrease costs but can also reduce the restriction of high temperature processes on device manufacturing.

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Direct growth of GaAs-based structures on exactly (001)-oriented Ge/Si virtual substrates: reduction of the structural defect density and observation of electroluminescence at room temperature under CW electrical injection

Cited by 33 publications

References 13 publications

Effect of bulk growth temperature on antiphase domain boundary annihilation rate in MOCVD-grown GaAs on Si(001)

Effect of bulk growth temperature on antiphase domain boundary annihilation rate in MOCVD-grown GaAs on Si(001)

The Effect of Interfacial Contamination on Antiphase Domain Boundary Formation in GaAs on Si(100)

Low Temperature (180°C) Growth of Smooth Surface Germanium Epilayers on Silicon Substrates Using Electron Cyclotron Resonance Chemical Vapor Deposition

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